采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜（AZO）。为了降低AZO薄膜的电阻率, 采用在溅射气氛中通入一定比例H2的方法对AZO薄膜进行氢化处理, 并研究了溅射气氛中H2含量及衬底温度对AZO薄膜氢化效果的影响。结果表明： 在低温条件下, 氢化处理能有效降低AZO薄膜的电阻率; 在衬底温度为100℃的低温条件下, 通过调节溅射气氛中H2的比例, 制备了电阻率为6.0×10^-4 Ω·cm的高质量氢化AZO薄膜, 该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3; 但随着衬底温度的升高, 氢化处理对薄膜电学性能的改善效果逐渐减弱。
Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by radio-frequency (RF) magnetron sputtering. In order to reduce the resistivity of the thin films, the AZO film was hydrogenated with the addition of H2 in the sputtering atmosphere. The effects of hydrogen ratio in the sputtering ambient and substrate temperature on the effectiveness of hydrogen incorporation in Al-doped ZnO films were investigated. The results show that hydrogen treatment can effectively reduce the resistivity of AZO thin films at low temperatures. At the low substrate temperature of 100℃, the high-quality AZO thin films with the lowest resistivity of 6.0×10^-4 Ω·cm can be obtained by adjusting the H2 ratio in sputtering ambient. The resistivity of AZO thin film with hydrogen incorporation is less than 1/3 compared with that of thin film without hydrogen incorporation under the same condition. Moreover, the improvement of hydrogen treatment on electrical properties is gradually weakened with the substrate temperature increasing.
参考文献
| [1] | Yang Zhiwei, Han Shenghao, Yah Tianlin, et al. Preparation of ITO films on water-cooled flexible substrate by bias RF magnetron sputtering [J].J Phys, 2000, 49(6): 1196-1201. |
| [2] | 李世涛,乔学亮,陈建国.透明导电薄膜的研究现状及应用[J].激光与光电子学进展,2003,40(7):53-59. |
| [3] | 李家亮,姜洪义,牛金叶,等.透明导电氧化物薄膜的研究现状及展望[J].现代技术陶瓷,2006,27(1):19-23. |
| [4] | 郑顺兴,李澄,范振鲁,等.透明SiOz/酚醛树脂纳米复合材料的制备及其吸收光谱[J].复合材料学报,2005,22(1):22-26. |
| [5] | Reynolds A, Look D C, Jogai B. Optically pumped ultraviolet lasing from ZnO[J].Solid State Commun, 1996, 99 (12) : 873-875. |
| [6] | Huang Junhang, Liu Chuanpu. The influence of magnesium and hydrogen introduction in sputtered zinc oxide thin films[J]. Thin Solid Films, 2006, 498(1/2): 152-157. |
| [7] | Huang Junhang, Liu Chuanpu. The influence of magnesium and hydrogen introduction in sputtered zinc oxide thin films[J]. Thin Solid Films, 2006, 498(1/2)- 152-157. |
| [8] | 洪瑞江,徐淑华.掺铝氧化锌薄膜的结构与刻蚀性能[J].华南理工大学学报:自然科学版,2010,38(6):151-156. |
| [9] | Barna P B, Adamik M. Fundamental structure forming phenomena of polycrystalline films and the structure zone models[J]. Thin Solid Films, 1998, 317(1/2): 27-33. |
| [10] | Sun Yanfeng, Liu Weifeng, He Zhidan, et al. Novel properties of AZO film sputtered in Ar-/- Hz ambient at high temperature [J]. Vacuum, 2006, 80(9): 981-985. |
| [11] | Ruske F, Sittinger V, Werner W, et al. Hydrogen doping of DC sputtered ZnO : A1 films from novel target material [J]. Surface & Coatings Technology, 2005, 200(1 - 4) : 236-240. |
| [12] | Lee J H. Effects of hydrogen incorporation and heat treatment on the properties of ZnO : A1 films deposited on polymer substrate for flexible solar cell applications [J].Current Applied Physics, 2010, 10(3): S515-S519. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%