采用Sol-gel法,在普通载玻片上使用旋转涂覆技术生长了具有c轴择优取向生长的ZnO薄膜.用热分析、XRD、SEM等手段对薄膜样品进行了表征.热分析结果表明:二水醋酸锌-乙醇胺-乙二醇甲醚体系Sol-gel的热分解过程与纯二水合乙酸锌的分解过程大相径庭.ZnO薄膜的Sol-gel分解趋于在较窄的温度范围内一步完成.在Si(111)衬底和玻璃衬底上生长了ZnO薄膜,都表现出明显的c轴择优取向生长.对比了不同涂覆层数对ZnO薄膜结构及表面形貌的影响,ZnO薄膜的c轴择优取向生长特性随着涂覆层数的增加而减弱,这是由于ZnO薄膜的生长模式由层状生长向岛状生长转变所致.ZnO薄膜在可见光范围的透光率超过85%.
参考文献
[1] | Ozgur U;Alivov Ya I;Liu C et al.A Comprehensive Review of ZnO Materials and Devicos[J].Journal of Applied Physics,2005,98:041301. |
[2] | Tang ZK.;Yu P.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Wong GKL. .Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Applied physics letters,1998(25):3270-3272. |
[3] | S. J. Pearton;D. P. Norton;K. Ip;Y. W. Heo;T. Steiner .Recent progress in processing and properties of ZnO[J].Progress in materials science,2005(3):293-340. |
[4] | C. Klingshirn;R. Hauschild;H. Priller;M. Decker;J. Zeller;H. Kalt .ZnO rediscovered — once again!?[J].Superlattices and microstructures,2005(4/6):209-222. |
[5] | Look D C;Reynolds D C;Litton C W et al.Characterization of Homoepitaxial p-type ZnO Grown by Molecular-beam Epitaxy[J].Journal of Applied Physics,2002,81(10):1830-1832. |
[6] | Wang P;Chen Nuofu;Yin Z G .P-doped p-type ZnO Films Deposited on Si Substrate by Radio-frequency Magnetron Sputtering[J].Applied Physics Letters,2006,88:152102. |
[7] | Liu W;Gu S L;Ye J D et al.Blue-yellow ZnO Homostructural Light-emitting Diode Realized by Metalorganic Chemical Vapor Deposition Technique[J].Applied Physics Letters,2006,88:092101. |
[8] | Oh Min-Suk;Kim Sang-Ho;Seong Tae-Yeon .Growth of Nominally Undoped p-type ZnO on Si by Pulsed-laser Deposition[J].Applied Physics Letters,2005,87:122103. |
[9] | Santos A M P;Santos Edval J P.High Quality c-axis Oriented Thin ZnO Film Obtained at Very Low Pre-heating Temperature[J].Materials Letters,2007:08057. |
上一张
下一张
上一张
下一张
计量
- 下载量(0)
- 访问量(286)
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%