剖析了改善快速恢复二极管(Fast recovery diode,FRD)反向恢复性能的发射率控制及少子寿命控制的实施方案.探究了间接带隙半导体硅FRD与SiGe、GaN、SiC等直接带隙半导体FRD的反向恢复性能,介绍了SiC的欧姆接触技术.比较了硅FRD与碳化硅FRD的实际应用效果,发现前者的反向及动态特性均落后于后者的性能,后者特别适合于高频、高电压、大功率技术领域的应用.
参考文献
| [1] | GollandA;WakemanFJ;LiG.New5.2kVextrafastrecoverydiodeforIGBTandIGCT[A].Nurenberg,Germany,2005:1. |
| [2] | Takaki, K.;Yagi, I.;Fujiwara, T.;Go, T. .Influence of circuit parameter on ozone synthesis using inductive energy storage system pulsed power generator[J].IEEE transactions on dielectrics and electrical insulation: A publication of the IEEE Dielectrics and Electrical Insulation Society,2011(5):1752-1758. |
| [3] | 刘鹿生 .碳化硅功率器件及其应用的最新研发进展[J].电力电子,2007,5(04):5. |
| [4] | KangIH;KimSC;BahngW et al.Accurateextractionmethodofreverserecoverytimeandstoredchargeforultrafastdiodes[J].IEICE TRANSACTIONS,2012,27(02):619. |
| [5] | StephenESaddow;AnantAgarwal.Advancesinsiliconcarbideprocessingandapplications[M].Boston,London:ArtechHouseInc,2004 |
| [6] | AdamowiczM;GiziewskiS;PietrykaJ.PerformancecomparisonofSiCSchottkydiodesandsiliconultrafastrecoverydiodes[A].Tallinn,2011:144. |
| [7] | BendaH;SpenkeE .Reverserecoveryprocessesinsiliconpowerrectifiers[J].Proceedings of the IEEE,1967,55(08):1331. |
| [8] | AdolfHerlet .Theforwardcharacteristicofsiliconpowerrectifiersathighcurrentdensities[J].SolidStateElectron,1968,11(04):717. |
| [9] | Schlangenotto H.;Serafin J. .Improved recovery of fast power diodes with self-adjusting p emitter efficiency[J].IEEE Electron Device Letters,1989(7):322-324. |
| [10] | Ettore Napoli;Antonio G.M. STROLLO;Paolo Spirito .Fast power rectifier design using local lifetime and emitter efficiency control techniques[J].Microelectronics journal,1999(6):505-512. |
| [11] | BaligaBJ;SunE .Comparisonofgold,platinumandelectronirradiationforcontrollinglifetimeinpowerrectifiers[J].IEEETransElectronDevices,1977,24(06):685. |
| [12] | 韩宝东,胡冬青,谢书珊,贾云鹏,亢宝位.局域铂掺杂寿命控制快恢复二极管的研究[J].半导体技术,2006(07):489-492. |
| [13] | 曾祥斌,孙树梅,袁德成,蒋陆金.铂扩散工艺对硅快恢复二极管特性的影响[J].华中科技大学学报（自然科学版）,2007(09):73-76. |
| [14] | Benda V.;Stepkova D.;Cernik M. .Deep energy levels in power diodes introduced by iridium diffusion[J].Microelectronics journal,1998(10):695-699. |
| [15] | AldreteVidrioHE;delValleJL;SantanaCorteJ .Technological,electricalandmixed-modesimulationoffastrecoveryepitaxialdiodes(FREDs)usingap+/n+mosaiccontact[J].MicroelectronReliab,2003,43(01):181. |
| [16] | 张海涛,张斌.快速软恢复二极管的发展现状[J].世界电子元器件,2001(04):29-33. |
| [17] | 潘飞蹊,黄林,廖天康,游志朴.少数载流子寿命横向非均匀分布的快恢复二极管特性[J].半导体学报,2004(03):297-301. |
| [18] | Oliver Humbel;Norbert Galster;Thomas Dalibor;Tobias Wikstrom;Friedhelm D. Bauer;Wolfgang Fichtner .Why is fast recovery diode plasma-engineering with ion-irradiation superior to that with emitter efficiency reduction?[J].IEEE Transactions on Power Electronics,2003(1 Pt.1):23-29. |
| [19] | WangChengjie;YinLi;WangChuanmin .Aphysics-basedmodelforfastrecoverydiodeswithlifetimecontrolandemitterefficiencyreduction[J].WorldAcademySciEngTechn,2012,61(01):113. |
| [20] | F. Hirose;Y. Souda;K. Nakano;S. Goya;T. Nishimori;S. Okumura .New SiGe bipolar transistors and p-i-n diodes for power switching[J].IEEE Transactions on Electron Devices,2001(10):2417-2420. |
| [21] | 马丽,高勇,刘静,王彩琳.大功率低功耗快速软恢复SiGeC功率开关二极管[J].物理学报,2007(12):7236-7241. |
| [22] | Grekhov, I.V.;Belyakova, E.I.;Kostina, L.S.;Rozhkov, A.V.;Argunova, T.S.;Oganesyan, G.A. .Reverse recovery of Si/Si_(1 - x)Ge_x heterodiodes fabricated by direct bonding[J].Technical physics letters: Letters to the Russian journal of applied physics,2011(7):632-635. |
| [23] | T.P. Chow;V. Khemka;J. Fedison .SiC and GaN bipolar power devices[J].Solid-State Electronics,2000(2):277-301. |
| [24] | Korol'kovVI;RozhkovAV;PetropavlovskayaLA .HighvoltageGaAsdiodeswithsubnanosecondgatevoltagerecovery[J].TechnPhysLett,2001,27(09):731. |
| [25] | Francesco lannuzzo;Giovanni Busatto .Physical CAD Model for High-Voltage IGBTs Based on Lumped-Charge Approach[J].IEEE Transactions on Power Electronics,2004(4):885-893. |
| [26] | LuLiqing;AngusTBryant;EnricoSanti et al.Physicalmodelingoffastp-i-ndiodeswithcarrierlifetimezoning,partⅡ:Parameterextraction[J].IEICE TRANSACTIONS,2008,23(01):198. |
| [27] | Bellone, S.;Corte, F.;Di Benedetto, L.;Licciardo, G. .An Analytical Model of the Switching Behavior of 4H-SiC p -n-n Diodes from Arbitrary Injection Conditions[J].IEEE Transactions on Power Electronics,2012(3):1641-1652. |
| [28] | Cao Lin,Pu Hong-Bin,Chen Zhi-Ming,Zang Yuan.Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery[J].中国物理B（英文版）,2012(01):449-452. |
| [29] | Igor V. Grekhov;Pavel A. Ivanov;Dmitry V. Khristyuk;Andrey O. Konstantinov;Sergey V. Korotkov;Tat'yana P. Samsonova .Sub-nanosecond semiconductor opening switches based on 4H-SiC p~+p_on~+-diodes[J].Solid-State Electronics,2003(10):1769-1774. |
| [30] | 张洪华,张崇宏,李炳生,周丽宏,杨义涛,付云翀.碳化硅中氦离子高温注入引入的缺陷及其退火行为的光谱研究[J].物理学报,2009(05):3302-3308. |
| [31] | 牛新军,张玉明,张义门,吕红亮,常远程.碳化硅MPS的功率损耗特性分析[J].固体电子学研究与进展,2003(02):193-198. |
| [32] | OgataS;MiyanagiY;NakayamaK et al.5kVclass4H-SiCpindiodewithlowvoltageovershootduringforwardrecoveryforhighfrequencyinverter[J].Proc23rdIntSympPowerSemiconductDevices&IC's,2011,1(01):296. |
| [33] | Keiko Fujihira;Santoshi Tamura;Tsunenobu Kimoto;Hiroyuki Matsunami .Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode[J].IEEE Transactions on Electron Devices,2002(1):150-154. |
| [34] | GuoHui;FengQian;QiaoDayong et al.Ohmiccontactswithheterojunctionstructureton-type4H-siliconcarbidebyN+polysiliconfilm[J].PROCEEDINGS OF THE SPIE,2009,6984(01):698435F-69841-4. |
| [35] | LuWeijie;MitchelWC;LandisGR et al.OhmiccontactpropertiesofNi/Cfilmon4H-SiC[J].SolidStateElectron,2003,47(12):2001. |
| [36] | 黄维,陈之战,陈博源,张静玉,严成锋,肖兵,施尔畏.氢氟酸刻蚀对Ni/6H-SiC接触性质的作用[J].物理学报,2009(05):3443-3447. |
| [37] | BuchholtK;GhandiR;DomeijM et al.OhmiccontactpropertiesofmagnetronsputteredTi3SiC2onn-typeandp-type4H-SiC[J].Applied Physics Letters,2011,98(04):042108. |
| [38] | KuthiA;BehrendM;VernierT et al.Bipolarnanosecondpulsegenerationusingtransmissionlinesforcellelectro-manipulation[J].IEEETransPlasmaSci,2005,33(04):1192. |
| [39] | HesamMirzaee;AnkanDe;AwneeshTripathi.Designcomparisonofhighpowermedium-voltageconvertersbasedon6.5kVSi-IGBT/Si-PiNdiode,6.5kVSi-IGBT/SiC-JBSdiode,and10kVSiCMOSFET/SiC-JBSdiode[A].Phoenix,AZ,2011:2421. |
| [40] | Krishna Shenai;Malay Trivedi;Philip G. Neudeck .Characterization of hard- and soft-switching performance of high- voltage Si and 4H-SiC PiN diodes[J].IEEE Transactions on Electron Devices,2002(9):1648-1656. |
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