采用直接热蒸发CdS粉末的方法,在不同的生长条件下制备出CdS纳米线和纳米带材料并对其形貌、结构和光学性质进行了研究.CdS纳米线具有单晶结构,且生长方向具有择优取向,而其纳米带不具有上述结构特征.光致发光光谱研究发现,室温下纳米线只在508 nm出现了CdS的本征发射带.然而,纳米带存在2个明显的发光峰,中心峰位分别位于513 nm和756 nm.这2个发射峰可分别指认为CdS的本征发射和V_s~+空位引起的发射.
CdS nanowires and nanobelts were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale under different experimental conditions. Their general morphologies, detailed microstructures and optical properties were characterized by scanning electron microscope, transmission electron microscope and Roman spectra, and fluorescence spectrometer. The CdS nanowire has a single crystal structure, and a preferred growth direction, which is not possessed by the CdS nanobelt. Photoluminescence measurements show that the nanowires have one emission band around 508 nm which originates from the intrinsic transitions of CdS. However, the nanobelts have two emission bands around 513 nm and 756 nm, which originate from the intrinsic transitions of CdS and V_s~+ holes.
参考文献
| [1] | Bhargava R N .[J].Optoelectronics-Devices and Technologies,1992,7:19. |
| [2] | Bobrenko Yu N;Kislyuk V V;Kolezhuk K V et al.[J].Solar Energy Materials and Solar Cells,1994,33:83. |
| [3] | Schlamp MC.;Alivisatos AP.;Peng XG. .IMPROVED EFFICIENCIES IN LIGHT EMITTING DIODES MADE WITH CDSE(CDS) CORE/SHELL TYPE NANOCRYSTALS AND A SEMICONDUCTING POLYMER[J].Journal of Applied Physics,1997(11):5837-5842. |
| [4] | Liu C H;Zapien J A;Yao Y et al.[J].Advanced Materials,2003,15:838. |
| [5] | Ma C;Moore D;Li J et al.[J].Advanced Materials,2003,15:228. |
| [6] | Didenko Y T;Suslick K S .[J].Journal of the American Chemical Society,2005,127:12196. |
| [7] | Marandi M;Taghavinia N;Zad A I et al.[J].Nanotechnology,2005,16:334. |
| [8] | Radovanovic PV;Barrelet CJ;Gradecak S;Qian F;Lieber CM .General synthesis of manganese-doped II-VI and III-V semiconductor nanowires[J].Nano letters,2005(7):1407-1411. |
| [9] | Doh, YJ;van Dam, JA;Roest, AL;Bakkers, EPAM;Kouwenhoven, LP;De Franceschi, S .Tunable supercurrent through semiconductor nanowires[J].Science,2005(5732):272-275. |
| [10] | Ethiraj Anita S;Hebalkar Neha;Kulkarni S K et al.[J].Journal of Chemical Physics,2003,118:8945. |
| [11] | Keem Kihyun;Kim Hyunsuk;Kim Gyu-Tae et al.[J].Applied Physics Letters,2004,84:4376. |
| [12] | Liu X L;Li C;Han S et al.[J].Applied Physics Letters,2003,82:1950. |
| [13] | Roy V A L;Djuisic A B;Liu H et al.[J].Applied Physics Letters,2004,84:756. |
| [14] | Duan X F;Huang Y;Agarwal R et al.[J].Nature,2003,421:241. |
| [15] | Shvydka D;Drayton J;Compaan A D et al.[J].Applied Physics Letters,2005,87:123505. |
| [16] | Wagner R S;Ellis W C .[J].Applied Physics Letters,1964,4:89. |
| [17] | Kulik D;Htoon H;Shih C K et al.[J].Journal of Applied Physics,2004,95:1056. |
| [18] | Long Y Z;Chen Z J;Wang W L et al.[J].Applied Physics Letters,2005,86:153102. |
| [19] | Bhattacharjee B;Ganguli D;Chaudhuri S .[J].Journal of Fluorescence,2002,12:369. |
| [20] | Liu W F;Jin C G;Jia C et al.[J].Chemistry Letters,2004,33:228. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%