室温下利用射频磁控溅射在Pt/Ti/SiO3/Si(100)上淀积了约200nm厚的PZT铁电薄膜,在N2(纯度为99.999%)气氛中以不同升温速率进行快速热退火,采用X射线衍射法表征其残余应力.结果表明,薄膜中的应力不是二维应力而是三维应力,且除了切应力σ22以外的大部分应力张量的分量为张应力;薄膜中张应力的增大主要是由于氧空位与晶粒尺寸共同作用的结果,而该应力的减小是由于晶粒尺寸在薄膜应力演变过程中占主导地位所致.
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