利用喷雾热解法制备了p型铟锡氧化物透明导电薄膜. 主要研究了铟含量和热处理温度对薄膜的晶体结构、导电类型和载流子浓度以及光吸收特性等的影响. 结果表明, 当In/Sn比较小
时, 薄膜为金红石结构的二氧化锡, 导电类型为n型; 当In/Sn比在0.06～0.25范围内且热处理温度T≥600℃时, 薄膜仍为金红石结构, 但导电类型转为p型的; 当In/Sn比超过0.3时,
薄膜中有立方相的In2Sn2O7-x生成, 由于氧空位的存在, 薄膜又转变为n型. 因此要获得p型导电的铟锡氧化物薄膜, In/Sn比不宜过低, 也不能过高. 热处理温度对薄膜的导电类
型也有影响, 对于In/Sn=0.2的薄膜, 温度低于550℃时薄膜为n型导电, 但当热处理温度高于550℃时, 由于In3+取代Sn4+, 因此薄膜为p型导电. 当热处理温度高于700℃
时, 薄膜中空穴浓度达到饱和数值为4×1018cm-3, 与此同时, 透射率在可见光范围内仍高达80%以上.
P-type transparent conducting indium-tin oxide thin films were successfully prepared by spray pyrolysis and characterized by XRD, Hall and UV-Visible transmission spectra. The results show that with small
In/Sn ratio, the films are in rutile SnO2 structure, and the films show n-type conductivity. With In/Sn ratio in the range of 0.06～0.25 and process temperature above 550℃, the films are still in
rutile structure, but the conductivity type changes to p-type. For films with In/Sn ratio >0.3, conductivity type changes back to n-type. The process temperature is also an important parameter to the films.
With In/Sn=0.2, the films show n-type for T<550℃, and change to p-type for T>550℃. The hole concentration saturates at T=700℃, with hole concentration as high as 4×1018cm-3.
Besides, all the films show transmission as high as 80% in the visible region.
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