近年来,Si基ZnO∶ Al透明导电薄膜界面处Si的渗透对薄膜性能的影响引起了人们的关注.本文采用射频磁控溅射法,在石英和Si衬底上沉积了不同厚度的Al、Si弱掺杂(1 wt.％)的ZnO薄膜(AZO∶ Si),系统研究了膜厚(等价于Si的渗透深度)对薄膜电学、光学性质的影响.结果显示,膜厚在几十nm时,薄膜的电阻率、载流子浓度和迁移率都强烈地依赖于膜厚,在膜厚为19nm时,载流子浓度和迁移率接近最小,电阻率较大,且呈现p型导电特性.随着膜厚增加,载流子浓度和迁移率都变大,电阻率减小并趋于稳定,膜厚在396nm附近时电阻率最小是7× 10-3Ω ·cm,此时的载流子浓度和迁移率分别是1.54×1020cm-3和5.66 cm2V-1s-1.膜厚达300nm以上时,Si的影响已可忽略.结合薄膜的X射线衍射(XRD)图谱、X射线光电子能谱(XPS)和紫外—可见光(UV-Vis)透射光谱探讨了膜厚(Si的渗透深度或过渡层厚度)对薄膜性能的影响及其相关机制.
参考文献
| [1] | Ma HB.;Cho JS.;Park CH. .A study of indium tin oxide thin film deposited at low temperature using facing target sputtering system[J].Surface & Coatings Technology,2002(2/3):131-137. |
| [2] | Nisha M;Anusha S;Antony A;Manoj R;Jayaraj MK .Effect of substrate temperature on the growth of ITO thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2005(5):1430-1435. |
| [3] | 张化福,刘瑞金,刘汉法,陈钦生,王新峰,梅玉雪.衬底温度对直流磁控溅射法制备掺锆氧化锌透明导电薄膜性能的影响[J].人工晶体学报,2010(03):766-770,775. |
| [4] | Ashour A;Kaid MA;El-Sayed NZ;Ibrahim AA .Physical properties of ZnO thin films deposited by spray pyrolysis technique[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(22):7844-7848. |
| [5] | T.Minami .Transparent conducting oxide semiconductors for transparent dectrodes[J].Semiconductor Science and Technology,2005,20:S35-S44. |
| [6] | A Suzuki;T Matsushita;T Aoki et al.Micro-textured milky ZnO ∶ Ga thin films fabricated by pulsed laser deposition using second-harmonic-generation of Nd:YAG laser[J].Japanese Journal of Applied Physics Part 2:Letters,1999,38:L71-L73. |
| [7] | BH Choi;H B Im;J S Song et al.Optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f.sputtering[J].Thin Solid Films,1990,193:712-720. |
| [8] | Hirasawa H.;Nakamura S.;Suzuki Y.;Okada S.;Kondo K.;Yoshida M. .ZnO : Ga conducting-films grown by DC arc-discharge ionplating[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):231-236. |
| [9] | Y Furubayashi;T Hitosugi;Y Yamamoto et al.A transparent metal:Nb-doped anatase TiO2[J].Applied Physics Letters,2005,86:2521011-2521013. |
| [10] | W Q Hana .Silicon doped boron carbide nanorod growth via a solid-liquid-solid process[J].Applied Physics Letters,2006,88:1331181-1331183. |
| [11] | T Minami;H Sato;H Nanto et al.Highty Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RFMagnetron Sputtering[J].Japanese Journal of Applied Physics Part 2:Letters,1986,25:L776-L779. |
| [12] | A K Das;P Misra;L M Kukreja .Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2009(16):165405-7. |
| [13] | Jun-ichi Nomoto;Toshihiro Miyata;Tadatsugu Minami .Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2009(4):1001-1005. |
| [14] | I.Sorar;D.Saygin-Hinczewski;M. Hinczewski;F.Z.Tepehan .Optical and structural properties of Si-doped ZnO thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2011(16):7343-7349. |
| [15] | 徐浩,陆昉,傅正文.磁控溅射中靶-基底距离与Si共掺对ZnO：Al薄膜性质的影响[J].物理化学学报,2011(05):1232-1238. |
| [16] | J.T. Luo;X.Y. Zhu;G. Chen;F. Zeng;F. Pan .The electrical, optical and magnetic properties of Si-doped ZnO films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2012(6):2177-2181. |
| [17] | 季振国,黄东,席俊华,柯伟青,周荣富.基于柱状ZnO薄膜的超低阈值电压压敏电阻[J].材料科学与工程学报,2009(01):9-11. |
| [18] | 张瑞捷,陈培良,马向阳,杨德仁.硅基Zn2SiO4：ZnO薄膜的电致发光[J].材料科学与工程学报,2010(04):498-500,513. |
| [19] | Park KC.;Kim KH.;Ma DY. .THE PHYSICAL PROPERTIES OF AL-DOPED ZINC OXIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):201-209. |
| [20] | Gupta V.;Mansingh A. .INFLUENCE OF POSTDEPOSITION ANNEALING ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SPUTTERED ZINC OXIDE FILM[J].Journal of Applied Physics,1996(2):1063-1073. |
| [21] | Su-Shia Lin;Jow-Lay Huang .The effect of thickness on the properties of heavily Al-doped ZnO films by simultaneous rf and dc magnetron sputtering[J].Ceramics International,2004(4):497-501. |
| [22] | M Ohring.The Materials Science of Thin Films[M].USA:Academic Press,1991:465-466. |
| [23] | Aihua Zhong;Jin Tan;Huali Huang;Shengchang Chen;Man Wang;Sai Xu .Thickness effect on the evolution of morphology and optical properties of ZnO films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2011(9):4051-4055. |
| [24] | 宋永梁,季振国,王泉香,向因,叶志镇.溶胶-凝胶提拉法制备ZnO薄膜及其性能研究[J].材料科学与工程学报,2004(01):9-11. |
| [25] | M. Ali Yildirim;Aytunc Ates .Influence of films thickness and structure on the photo-response of ZnO films[J].Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter,2010(7):1370-1377. |
| [26] | Meifu Jiang;Zhenning Wang;Zhaoyuan Ning .Study of structural and optical properties of Ge doped ZnO films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(24):6717-6720. |
| [27] | 李万程,张源涛,杜国同,杨树人,王涛.RF磁控溅射法在Si衬底上生长ZnO薄膜界面的XPS研究[J].吉林大学学报(理学版),2003(04):493-496. |
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