采用电镀的方法在制备了尺寸小于100 μm的Sn-3.0Ag凸点,研究了多次回流和时效过程下SnAg/Cu界面IMC的生长、孔洞的生长机理和分布以及影响因素.结果表明,回流过程中孔洞彤成的主要原因是相变过程发生的体积缩减,而时效过程中孔洞形成的主要原因是柯肯达尔效应.时效过程中Cu3Sn(ε相)中孔洞的生长及分布受初始形成的Cu6Sn5(η相)影响.厚η相及η晶界处形成的孔洞促进ε相中孔洞的生长.平直的ε相/Cu界面以及ε相层内孔洞的连接对凸点的长期可靠性构成威胁.
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