对电阻率为103~6Ω·cm的In掺杂Cd0.9Zn0.1Te晶片在Te气氛和Cd/Zn平衡蒸汽压下进行了热处理,对电阻率为108~9Ω·cm的非掺杂晶片则在In气氛和Cd/Zn平衡蒸汽压下进行了热处理.结果表明,In掺杂Cd0.9Zn0.1Te晶片经处理后电阻率可提高3个数量级.非掺杂晶片在In气氛中热处理可很容易地改变导电类型,在热处理温度700℃,In分压6.1×10-4 Pa,退火时间达48 h后,电阻率可以提高到2.6×109Ω·cm.
The as-grown In-doped Cd0.9Zn0.1Te wafers of ρ about 103~6 Ω·cm were annealed in Te atmosphere under Cd/Zn equilibrium pressures and the as-grown non-doped Cd0.9Zn0.1Te wafers of ρ about 108~9 Ω·cm were annealed under In+Cd/Zn equilibrium pressures. The results show that for the In-doped annealed wafer, the resistivity could be raised by three orders.And it is found that the conductivity type of the non-doped CZT wafers could be changed easily during the In vapor phase annealing process, and the resistivity of the wafer could be raised up to 2.6 × 109 Ω·cm when it was annealed at 700℃ under the In pressure of 6.1 × 10-4 Pa for 48 h.
参考文献
[1] | Eisen Y.;Shor A. .CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors[J].Journal of Crystal Growth,1998(0):1302-1312. |
[2] | MIN Jia-hua,SANG Wen-bing,LI Wan-wan,LIU Hong-tao,YU Fang,WANG Kun-shu,CAO Ze-chun.Parameter Optimization of CdZnTe Crystal Growth Simulated by Finite Element Method[J].半导体光子学与技术(英文版),2005(01):20-27. |
[3] | Schieber M.;Schlesinger TE.;James RB.;Hermon H.;Yoon H.;Goorsky M. .Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals[J].Journal of Crystal Growth,2002(Pt.3):2082-2090. |
[4] | KOYAMA A.;HICHIWA A.;HIRANO R. .Recent Progress in CdZnTe Crystals[J].Journal of Electronic Materials,1999(6):683-687. |
[5] | Han M.S.;Kim T.W.;Kang T.W. .Effect of thermal annealing on the structural and electrical properties of HgTe/CdTe superlattices[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1999(1):105-110. |
[6] | Vydyannath H R et al.[J].Journal of Electronic Materials,1993,22(08):1067. |
[7] | Uri Lachish .Semiconductor crystal optimization of gamma detection[J].Journal of Crystal Growth,2001(2/4):114-117. |
[8] | 闵嘉华,桑文斌,钱永彪,李万万,刘洪涛,樊建荣.CdZnTe晶体生长用石英管的镀碳工艺研究[J].功能材料与器件学报,2005(02):255-258. |
[9] | Li Yujie;Ma Guoli;Jie Wanqi .Point defects in Cd~(0.95)Zn_(0.05)Te[J].Journal of Crystal Growth,2003(3/4):219-224. |
[10] | Li Yujie;Ma Guoli;Zhan Xiaona;Jie Wanqi .The Annealing of Cd_(1-x)Zn_xTe in CdZn Vapors[J].Journal of Electronic Materials,2002(8):834-840. |
[11] | Kr(o)ger F A.The Chemistry of Imperfect Crystals[M].Amsterdam:North-Holland Publisher,1964:672. |
[12] | Yu T C et al.[J].Journal of Phase Equilibria,1992,476(13):1351. |
[13] | Fochuk P et al.[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,2001,458:104. |
[14] | Watson E et al.[J].J Phys C,1983,16:515. |
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