以ZnO粉末为主要原料,以TiO2、Bi2O3、MnO2、Co2O3、Sb2O3为组元,在常规电子陶瓷生产工艺下制备低压化ZnO压敏陶瓷.将掺杂TiO2的陶瓷片与未掺杂TiO2的陶瓷片进行对比分析,确定最佳掺杂量.采用能谱仪分析瓷片的微区成分,采用SEM观察瓷片断口形貌,利用压敏电阻直流参数仪测量瓷片的电学性能.研究结果表明,瓷片内部主要存在富Bi晶界、Bi贫化晶界和晶粒直接接触晶界;TiO2对ZnO晶粒有助长作用,不掺杂纳米TiO2陶瓷是11.4 μm,掺杂纳米TiO2高达30.5 μm;当TiO2掺杂量为1.5％ mol时瓷片电学性能较优,即压敏电压为31.2 V/mm、漏电流为0.028 mA及为非线性系数为20.1.
参考文献
| [1] | Nahm C W .Microstructure and electrical properties of ZnO-V2O5-MnO2-Co3O4-Dy2O3-Nb2O5-based varistors[J].J Alloy Compd,2010,490(1):52-54.,2010. |
| [2] | Selim F A,Gupta T K,Hower P L .Low-voltage ZnO varistor:device process and defect model[J].J Appl Phys,1980,51(1):765-768.,1980. |
| [3] | Slavko B .Influence of Bi2O3/TiO2,Sb2O3and Cr2O3 doping on low-voltage varistor ceramics[J].J Eur Ceram Soc,1999,19 |
| [4] | Matsuoka M .Nonohmic properties of Zinc oxide ceramics[J].Jpn J Appl Phys,1971,10(6):736-746.,1971. |
| [5] | Yah M F,Rhodes W W.Grain Boundaries in Semiconductors[M].New York Elsevier,1982:357-362.,1982. |
| [6] | Karat D K,Sailar S R,Sate S K,et al .Zinc oxide varistors synthesis,eharacterization and applieations[J].J Sci Res,1991,50(8):569-605.,1991. |
| [7] | Hozer L.Metal-Oxide Varistor Semiconductor Ceramics:Grain Boundary Effects[M].Poland:Polish Scientific Publishers,1994:44-109.,1994. |
| [8] | Souza F L,Gomes J W,Bueno P R,et al .Effect of addition of ZnO seeds on the electrical properties of ZnO-based varistors[J].Mater Chem Phys,2003,80 |
| [9] | Kim E D,Kim C H .Role and effect of Co2O3 additive on the upturn characteristics of ZnO varistors[J].J Appl Phys,1985,58(8):3231-3235.,1985. |
| [10] | Asokan T,Zyengar G N K,Nagabhushana G R .Non-ohmic behavior of the binary of ZnO-Nb2O5system[J].J Mater Sci,1987,22(3):1019-1023.,1987. |
| [11] | Zhu J F,Luo H,Wang F,et al .Sintering process for Pr6O11 doped ZnO varistors[J].Journal of Shan Xi University of Science,2004,22(5):381-386.,2004. |
| [12] | Henning D F K,Hartung R,Reijnen P J L .The grain size control in low-voltage varistors[J].Jam Ceram Soc,1990,73(3):645.,1990. |
| [13] | Selim F A,Gupta T K,Hower P L .Low-voltage ZnO varistor:device process and defect model[J].J Appl Phys,1980,51(1):765-768.,1980. |
| [14] | Elfwing M,Olsson E .Differences in wetting characteristics of Bi2O3 polymorphs in ZnO varistor materials[J].J Am Ceram Soc,2000,83(9):2311-2314.,2000. |
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