低电压并五苯晶体管的制北

功能材料, 2004, 35(z1): 1361-1363.

1.大连理工大学,三束材料改性国家重点实验室,大连理工大学,物理系,辽宁,大连,116024

2.大连理工大学,三束材料改性国家重点实验室,大连理工大学,物理系,辽宁,大连,116024

3.大连理工大学,三束材料改性国家重点实验室,大连理工大学,物理系,辽宁,大连,116024

基金项目: 国家自然科学基金(60306001)

The preparation of low voltage pentacene thin film transistors

介绍了利用物理气相沉积的技术制备有机物并五苯场效应晶体管(OTFT)的方法.通过扫描电镜(SEM)和X射线衍射谱(XRD)对并五苯薄膜的分析,发现并五苯薄膜具有良好的表面形貌和晶体特性.其载流子迁移率达0.3cm2/Vs,并五苯晶体管具有低电压特性.

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