电弧离子镀CrSiN薄膜的内应力控制与厚膜化

材料热处理学报, 2010, 31(10): 119-123.

电弧离子镀CrSiN薄膜的内应力控制与厚膜化

聂朝胤 ^1, , 安藤彰朗 ^2, , 潘婧 ^3, , 贾晓芳 ^4,

1.西南大学材料科学与工程学院,重庆,400715;等离子工学研究所,日本,大阪,573-0128

2.等离子工学研究所,日本,大阪,573-0128

3.西南大学材料科学与工程学院,重庆,400715

4.西南大学材料科学与工程学院,重庆,400715

基金项目: 重庆市科技攻关计划项目(CSTC;2008AC4017;CSTC;2009AB6127)

关键词：电弧离子镀 , CrSiN薄膜 , Cr应力缓和层 , 内部应力 , 膜基结合强度

Deposition and residual stress modulation Of CrSiN thick films by arc ion deposition method

采用电弧离子镀技术在不锈钢SUS440C基片上沉积了CrSiN薄膜,并在此基础上通过引入Cr应力缓和层制备了CrSiN/Cr多层薄膜,研究了Cr应力缓和层对缓解CrSiN薄膜内部应力、增强膜基结合力、提高薄膜沉积厚度的作用.利用X射线衍射仪及sin2ψ法测试计算了薄膜的内部应力、采用扫描电镜及透射电镜观察了薄膜的显微结构,采用微米划痕仪测试了膜基结合强度.结果表明:20～30nm极薄Cr层的导入,缓解了CrSiN薄膜内部应力的积累,降低了薄膜整体的内部应力,选择合适的Cr层数,最大可降低内部应力1/2.CrSiN/Cr多层膜仍保持了原有的连续柱状晶生长模式,CrSiN层与Cr层间,界面完整清晰,Si-N非晶部分缓解了CrSiN中CrN晶格与Cr层中Cr晶格间的失配,使得层间结合紧密牢固.划痕仪测试结果表明膜基结合强度与薄膜内部应力呈现出高度的相关性,Cr应力缓和层的导入改善了薄膜的膜基结合力、提高了薄膜可沉积厚度.

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