采用化学共沉淀法制备纳米级氧化铟锡复合粉体前驱物,煅烧得到纳米级氧化铟锡(ITO)复合粉体,用TG-DTA,XRD,TEM,ICP-AES,XRF和BET研究了纳米级ITO复合粉体的性能.前驱物铟锡氢氧化物的分解温度为291.5℃,300℃下烧结即可得到立方结构的ITO结晶粉体,Sn嵌入到In2O3晶格中,形成单相的ITO固溶体颗粒.随着温度的升高,ITO固溶体颗粒结晶更完全,晶粒长大.前驱物铟锡氢氧化物分别在600℃,800℃和900℃煅烧4 h得到粒度均匀、分散性好、粒径为20 nm～30 nm的类球形ITO复合粉体.600℃煅烧得到的ITO复合粉体的纯度为99.995%,配比为In2O3:90.045%,SnO2:9.955%,比表面积为50.88 m2/g.该粉体烧结活性高,将该粉体用简单的烧结工艺在1000℃烧制的ITO靶材相对理论密度达到99.25%.
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