Structure and optical characterization of GaP-SiO2 co-sputtered films

稀有金属（英文版）, 2008, 27(6): 580-585.

^1, , ^2, , ^3, , ^4,

1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

2.School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

3.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China

4.School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

基金项目: the University Students' Innovation and Start-ups Special Project of Taiyuan Science and Technology Board(07010759) 山西省自然科学基金(20041073)

Structure and optical characterization of GaP-SiO2 co-sputtered films

CHAI Yuesheng ^1, , YANG Meihui ^2, , ZHANG Mingang ^3, , SUN Gang ^4,

1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

2.School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

3.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China

4.School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

Keywords： semiconductor materials

The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent annealing technology.The stracture and morphology of the films were investigated by scanning electron microscope,X-ray diffi-action,and energy dispersive spectrum.Raman spectra results showed that the transverse optical phonon model (TO) and the longitudinal optical phonon model (LO) of GaP nanocrystais were both discovered to undergo red shift,broadening,and asymmetry.The red shift degree of the TO model was about 8.8 cm-1.The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks.2.84-2,54 eV blue light emission was explained by the quantum confinement-luminescence centers model (QC-LCs).

参考文献

[1]	Choi W.K;Ng V;Ho Y.W;Ng S.P Chen T.B Yu M.B Rusli,Yoon S.F Cheong B.A and Chen G.L .Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system[J].MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS,2001,16:135.
[2]	Torchyuska T.V;Hemandez J.A;Hemandez L.S;Goldstein Y Many A Jedrzejewski J and Kolobov A.V .Photoluminescence of silicon oxide films enriched by Si or Ge[J].Journal of Luminescence,2003,102-103:557.
[3]	Shen JK.;Bao XM.;Yuan RK.;Zou JP.;Tan C.;Wu XL. .Strong violet emission from Ge-SiO2 co-sputtered films annealed in O-2 atmosphere[J].Physics Letters, A,2000(3):208-211.
[4]	Torehynska T.V;Hernandez A.V;Kolobov A.V;Goldstein Y Savir E and Jedrzejewski J .Visible photoluminescence of Ge enriched SiOx layers[J].J Electron Spectrose Relat Phenom,2004,137-140:620.
[5]	王浩,杨恢东,丁瑞钦.GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究[J].光学学报,2000(06):847-851.
[6]	Zhu K.G;Shi J.Z;Wei Y.F;Zhang L.D .Preparation of InSb nanocrystals embedded in SiO2 thin film[J].Chin Sci Bull,1998,43(13):1389.
[7]	Ding R.Q;Wang H;Lau W.F;Cbeung W.Y Wong S.P Wang N.J and Yu Y.M .The mierostructure and optical properties of the nanocomposite films of InP/SiO2[J].Acta Physica Sinica,2001,50(08):1578.
[8]	Zheng M.J;Zhang L.D;Li G.H;Jiang Z .The preparation and optical properties of InP embedded composite films[J].Chin Sci Bull,2000,45(19):2062.
[9]	Guo YP.;Wee ATS.;Huan CHA.;Li K.;Pan JS.;Feng ZC.;Chua SJ.;Zheng JC. .Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix[J].Chemical Physics Letters,2001(5-6):319-322.
[10]	石礼伟,李玉国,王书运,薛成山,庄惠照.SiC/SiO2镶嵌结构薄膜光致发光特性研究[J].电子元件与材料,2004(07):41-43.
[11]	Bi WG.;Tu CW.;Mei XB. .GROWTH STUDIES OF GAP ON SI BY GAS-SOURCE MOLECULAR BEAM EPITAXY[J].Journal of Crystal Growth,1996(1/4):256-262.
[12]	Sadeghi M;Wang S .Growth of Gap on Si substrates by solid-source molecular beam epitaxy[J].Journal of Crystal Growth,2001,227-228:280.
[13]	Dixit VK;Ganguli T;Sharma TK;Kumar R;Porwal S;Shukla V;Ingale A;Tiwari P;Nath AK .Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing[J].Journal of Crystal Growth,2006(1):5-13.
[14]	ZHANG Zhaochun,YUE Longyi,GUO Jingkang.Effect of heat-treatment on the surface properties of gallium phosphide nanosolids by Raman spectroscopy[J].稀有金属（英文版）,2006(03):253-259.
[15]	马宝珊,方再利,苏付海,丁琨,韩和相,李国华,Mark lamy de la Chapelle,范守善.纳米碳管模板法制取的GaP纳米棒拉曼光谱研究[J].红外与毫米波学报,2003(01):1-7.
[16]	Zhang CJ;Jia WH .The structures, stability, and photoelectron spectroscopy of GaPX- (X = C, Si, Ge; O, S; P and Ga) clusters[J].Chemical Physics: A Journal Devoted to Experimental and Theoretical Research Involving Problems of Both a Chemical and Physical Nature,2006(1):144-150.
[17]	Cardona M;Mi Z.Y;Mao P.F.Light Scattering in Solids[M].北京:科学出版社,1986:249.
[18]	张俊刚,夏长泰,吴锋,裴广庆,徐军,邓群,徐悟生,史宏生.β-Ga2O3单晶浮区法生长及其光学性质[J].功能材料,2006(03):358-360,363.
[19]	Chang SS.;Gao W. .Luminescence properties of spark-processed GaP[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(1):1-5.
[20]	Chen LY;Luo T;Huang MX;Gu YL;Shi L;Qian YT .A mild reduction-phosphidation approach to nanocrystalline GaP[J].Solid State Communications,2004(10):667-671.
[21]	Yue L.Y;Zhang Z.C;Chen X .Absorption and fluorescence spectra of gallium phosphide(Gap)nanoparticles[J].Transactions of Nonferrous Metals Society of China,2006,16:863.
[22]	Zhou L.J .Optical and Light-catalyzed Properties of Nanosize GaP Semiconductor Material[D].Shanghai University,Shanghai,2004.

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Structure and optical characterization of GaP-SiO2 co-sputtered films

参考文献