利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜.通过俄歇电子能谱(AES),X光电子能谱(XPS)等分析手段系统研究了在Si基片上直接生长BTO铁电薄膜过程中的界面扩散现象.根据研究得到的BTO/Si界面扩散规律,采用一种新型的"温度梯度调制生长方法"减小、抑制BTO/Si界面互扩散行为,实现了BTO铁电薄膜在Si基片上的选择性择优定向生长,为在Si基片上制备具有原子级平整度的择优单一取向的BTO铁电薄膜奠定了基础.
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