报道了利用高剂量Ge+注入制备SiGe/Si异质结的工作.100keV、5.3×1016/cm2/cm2 Ge+注入(001)SIMOX膜中,峰值Ge+浓度接近20%.样品在不同温度下进行不同时间的快速热退火,X射线衍射分析和背散射沟道谱研究表明:1000°C退火0.5h,退火效果较好;退火时间过短或过长,退火温度过高或过低,都将影响退火效果.
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