PVT法生长SiC过程中晶体内部的热应力是其位错产生的主要原因,而生长界面的形状对晶体热应力及缺陷的产生都有一定影响.本文对不同生长界面晶体的温场及应力场进行了数值分析,结果显示相对于凸出及平整界面的晶体,微凹界面晶体的轴向温差最小,同时产生缺陷的切应力Τrz及引起开裂的径向正应力σrr值都为最小.
参考文献
| [1] | 陈治明.半导体概论[M].北京:电子工业出版社,2008:89-90. |
| [2] | S. H. Lin;Z. M. Chen;P. Liang .Investigation of micropipe defect terminating during SiC crystal growth[J].Materials Science and Technology: MST: A publication of the Institute of Metals,2011(2):586-588. |
| [3] | Lin S H;Chen Z M;Liang P et al.Formation and Suppression of Misoriented Grains in 6H-SiC Crystals[J].Crystal Engineering Communications,2011,13:2709-2713. |
| [4] | Shenghuang Lin;Zhiming Chen;Xianfeng Feng .Observation of polytype stability in different-impurities-doped 6H-SiC crystals[J].Diamond and Related Materials,2011(4):516-519. |
| [5] | Cherednichenko D I;Drachev R V;Khlebnikov I I et al.Thermal Stress as the Major Factor of Defect Generation in SiC during PVT Growth[J].Materials Research Society,2003,742:1812-1816. |
| [6] | Jordan A S;Caruso R;Von Neida A R .A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals[J].The Bell System Tech,1980,59(04):593. |
| [7] | M.Selder;L.Kadinski;F.Durst .Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions[J].Journal of Crystal Growth,2001(4):501-510. |
| [8] | Ronghui Ma;Hui Zhang;Vish Prasad;Michael Dudley .Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide[J].Crystal growth & design,2002(3):213-220. |
| [9] | 封先锋,陈治明,蒲红斌.SiC晶体的PVT生长系统及测温盲孔对热场的影响[J].人工晶体学报,2010(03):741-746. |
| [10] | 封先锋,陈治明,蒲红斌.6H-SiC单晶锭边缘的多晶环控制[J].人工晶体学报,2010(05):1124-1129,1140. |
| [11] | Olaf Klein;Peter Philip;Jurgen Sprekels .Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals[J].Journal of Crystal Growth,2001(4):832-851. |
| [12] | Zhmakin I A;Kulik A V;Karpov S Y et al.Evolution of Thermoelastic Strain and Dislocation Density during Sublimation Growth of Silicon Carbide[J].Diamond and Belated Materials,2000,9:446. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%