介绍了以光电应用为背景的大尺寸ZnTe单晶生长技术的研究进展,综述了大尺寸ZnTe单晶不同生长技术的特点及其对单晶性能的影响,重点分析了为解决ZnTe生长过程中存在的蒸汽压过高的问题,通过控制提高Te的比例,实现低温低压生长,对比了不同生长方法的生长机理差异及其对单晶尺寸、缺陷和性能的影响,为寻求解决大尺寸单晶生长面临的问题提供了参考.
参考文献
| [1] | Tanaka T;Nishio M;Guo Q;Ogawa H .Fabrication of ZnTe Light-Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer[J].Japanese journal of applied physics,2008(11):8408-8410. |
| [2] | Tanaka T;Saito K et al.Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate[J].J Mater Sci-Mater Electronics,2009,20(z1):505. |
| [3] | 王仍,葛进,方维政,张惠尔,胡淑红,戴宁,李栋,马国宏.碲-熔剂方法生长ZnTe单晶的太赫兹辐射及探测[J].红外与毫米波学报,2009(01):1-3,15. |
| [4] | 王仍,方维政,赵培,张雷,葛进,袁诗鑫,张惠尔,胡淑红,戴宁,陈晓姝,吴晓君,何山,王钢.应用于THz辐射的ZnTe单晶生长及测试[J].半导体学报,2008(05):940-943. |
| [5] | Asahi T et al.Growth of large diameter ZnTe single crystals by the LEK method[J].Journal of Alloys and Compounds,2004,371:2. |
| [6] | Asahi T.;Sato K.;Arakawa A. .Growth of large-diameter ZnTe single crystals by the vertical gradient freezing method[J].Journal of Crystal Growth,2001(1):74-78. |
| [7] | Arakawa A.;Asahi T.;Sato K. .Growth and characterization of large diameter ZnTe single crystals[J].Physica status solidi, B. Basic research,2002(1):11-14. |
| [8] | Seki Y;Sato K et al.Solution growth of ZnTe single crystals by the vertical Bridgman method using a hetero-seeding technique[J].Journal of Crystal Growth,1997,171:32. |
| [9] | Mycielski A.;Lusakowska E.;Kowalczyk L.;Domagala J. Bak-Misiuk J.;Wilamowski Z.;Szadkowski A. .Parameters of substrates-single crystals of ZnTe and Cd1-xZnxTe (x < 0.25), obtained by physical vapor transport technique (PVT)[J].Journal of Crystal Growth,1999(3):423-426. |
| [10] | Korostelin YV.;Shapkin PV.;Kozlovsky VI. .Seeded-vapour-phase free growth and characterization of ZnTe single crystals[J].Journal of Crystal Growth,2000(0):870-874. |
| [11] | Asahi T.;Yabe T.;Sato K. .ZnTe single crystal growth by the liquid encapsulated pulling method[J].Physica status solidi, B. Basic research,2004(3):648-651. |
| [12] | Kroger F A .The P-T-X phase diagram of the system zinctellurium[J].Journal of Physical Chemistry,1966,69:3367. |
| [13] | Feltgen T;Greenberg J H et al.P-T-X phase equilibrium studies in Zn-Te for crystal growth by the Markov method[J].IntJ Inorg Mater,2001,3:1241. |
| [14] | T.Asahi;T.Yabe;K.Sato .Growth of Large-Diameter ZnTe Single Crystals by Liquid-Encapsulated Melt Growth Methods[J].Journal of Electronic Materials,2004(6):651-653. |
| [15] | Mycielski A.;Szadkowski A.;Kowalczyk L.;Lusakowska E. .Low defect density, substrate quality crystals of the wide-gap II-VI compounds, obtained by physical vapour transport technique (PVT)[J].Journal of Crystal Growth,1998(0):1044-1047. |
| [16] | 徐家跃.底部籽晶法：一种高温溶液晶体生长新方法[J].人工晶体学报,2005(01):1-6. |
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