共掺杂Cu,Te后禁带宽度变窄对In2Se3基半导体热电性能的影响

稀有金属材料与工程, 2012, 41(12): 2118-2122.

共掺杂Cu,Te后禁带宽度变窄对In2Se3基半导体热电性能的影响

崔教林 ^1, , 张晓军 ^2, , 李奕沄 ^3, , 高榆岚 ^4,

1.宁波工程学院,浙江宁波,315016

2.中国矿业大学,江苏徐州,221116

3.太原理工大学,山西太原,030024

4.中国矿业大学,江苏徐州,221116

基金项目: 国家自然科学基金(50871056) 国家"863"高科技计划项目(2009AA03Z322) 浙江省自然科学基金(Y4100182) 宁波市自然科学基金(2011A610093)

关键词： α-In2Se3基半导体 , 禁带宽度(Eg) , 热电性能

Effect of Band Gap Reduction on the Thermoelectric Properties of In2Se3 Based Semiconductors after Co-Doping of Cu and Te

α-In2Se3是一类A2ⅢB3Ⅳ型宽带隙半导体材料.但在α-In2Se3化合物中共掺杂适量的Cu,Te后发现禁带宽度(Eg)变窄,Eg值由本征态时的1.32 eV减小到1.14 eV.掺杂后电学性能得到了大幅度的改善.最大功率因子由0.76×10-4增大到2.8×10-4 W·m-1·K-2；最大热电优值(ZT)从本征态时的0.25提高到0.63.高分辨电镜(HRTEM)观察结果表明,在未掺杂时,α-In2Se3呈现非晶状组织,共掺杂Cu,Te后,微结构则转变成明显的多晶组织.在温度高于500 K时,掺杂后晶格热导率的适量提高与该微结构转变有直接联系.

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材料期刊网

共掺杂Cu,Te后禁带宽度变窄对In2Se3基半导体热电性能的影响

Effect of Band Gap Reduction on the Thermoelectric Properties of In2Se3 Based Semiconductors after Co-Doping of Cu and Te

参考文献