利用溶胶凝胶工艺在Pt/TiO_2 /SiO_2 /Si衬底上制备了Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15)铁电薄膜.研究了不同钐掺量对薄膜的显微结构、晶粒取向及铁电性能的影响.结果表明:钐掺杂对钙锶铋钛铁电薄膜既有抑制氧空位所导致的畴钉扎作用,也有抑制晶粒生长发育的作用.当钐掺量x=0.05时薄膜样品晶粒发育较良好,沿a轴择优取向,I_((200))/I_((119))=0.869;样品铁电性能优良,剩余极化强度P_r=10.2 μC/cm~2,矫顽场强度E_c=120 kV/cm.
Samarium doped calcium strontium bismuth titanium Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15) ferroelectric films were prepared on Pt/Ti/SiO_2/Si substrates by sol-gel method. The effect of Sm content on microstructure, growth orientation, ferroelectric of films were investigated. The result shows that Sm can inhibit the pining effect resulting form oxygen vacancies, hinder the grain growth and reduce the size of grain. The ferroelectric property of Ca_0.4Sr_0.6Bi_4Ti_4O_(15) can be improved by adding proper amount of Sm dopants. The Pr reaches a maximum value of 10.2 mC /cm~2 when E_c=120 kV/cm, and the I_((200))/I_((119)) reaches 0.869 when x=0.05. The film is preferred a-axis orientation, and the majority of grains in the film are spheroidal and the grain size is about 140 nm.
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