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以Si粉、SiO2粉和人造石墨为原料,在1480℃、4 kW、80 min的真空微波辐照条件下快速高效地合成SiC纳米线。利用SEM、TEM、XRD等对所得产物的微观结构解析表明,在未使用催化剂的条件下,基于气固( VS)机制可成功制备出β型SiC。根据坩埚中的部位不同,所得SiC呈现出不同的形貌。坩埚上层的产物呈亮绿色,较为纯净,主要为直径约150 nm的纳米棒,并含有部分微米级SiC晶粒,表面氧化迹象不明显。其余部分产物呈灰绿色,主要是直径为20~50 nm的SiC/SiO2同轴纳米线(表层的SiO2厚度约2 nm),并夹杂有未反应完全的石墨和SiO2。利用波长为240 nm的激发光分别对SiC纳米棒和同轴纳米线的光致发光特性的测试表明,两者均可观察到峰位在390 nm左右的发射峰,此结果与所报道的β-SiC纳米材料的发光性能相比,蓝移程度更高。

SiC nanowires were synthesized by a microwave-heating method at 1480 ° C for 80 min under vacuum, using silicon powder, silica dioxide powder and artificial graphite as raw materials. SEM, TEM and XRD were used to investigate the microstruc-ture of the samples and excitation light with wavelength of 240 nm was used to test the photoluminescence properties of the products. Results indicated thatβ-SiC can be synthesized directly without using a catalyst by the vapor-solid growth mechanism. The samples exhibited different morphologies and sizes at different zones due to the temperature differences. The products in an upper crucible were bright-green, relatively pure SiC, consisting of mainly nano-rods with a diameter of about 150 nm and small amount of SiC micro-crystals, and surface oxidation was not obvious. The products in other zones were grey-green with lots of SiC/SiO2 coaxial nanowires with a diameter around 20-50 nm and a SiO2 surface layer of thickness about 2 nm, and there was also some un-reacted graphite and silica dioxide. Both the SiC nano-rods and SiC/SiO2 coaxial nanowires exhibited a strong broad photoluminescence peak at a wavelength of about 390 nm and a high degree of blue-shift compared with the reported luminescence ofβ-SiC nano-mate-rials.

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