材料期刊网

Polarization insensitive 13 10 nm InGaAsP-InP multi-quantum-well (MQW) semiconductor optical amplifiers (SOAs), with 7degrees tilted ridge waveguide and buried-window end facets, have been fabricated and fully characterized on chip and module level. SOAs chips with an optimized complex strained MQW active region exhibited less than 1 dB polarization dependence of amplified spontaneous power in the drive current range of 50-200 mA. The amplifier module, having a residual facet reflectivity of 2.8 x 10(-5), achieved 25 dB fibre-to-fibre unsaturated gain, for both transverse electric and transverse magnetic polarization states, 11.2 dBm saturation output power, and 7.6 dB noise figure at 1310 nm. The polarization dependence of gain was less than 0.6 dB in the 3 dB gain bandwidth of 56 nm. Coupling efficiency played a significant role in the gain, saturation output power and noise figure of a SOA module. Spot-size-converter integrated SOAs with buried heterostructures are expected to exhibit further improved performances.