本文采用射频磁控溅射法在ITO/Glass衬底上制备了Cu/HfOx/Ti MIM结构,对其电学性能和化学成分进行了分析.结果表明,Cu/HfOx/Ti结构在不发生软击穿(forming)的情况下具有明显的双极电阻转变特性,高低阻比大于10,并且具有良好的重复性与保持性.HfOx薄膜中含有大量的氧空位,电阻转变过程可能与氧空位形成的导电细丝有关.
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