用撇取氧化膜的方法配合XPS和X射线衍射研究了P、As,Ga,Ge,In,Al,Mg,Zn,Cu,Ag,Cd,Tl,Pb,Sb,Bi等15个微量元素(浓度0.005at.-％)在液态Sn表面膜和体相中的分布。其中Ga,P,Ge,Mg,Zn,Al,In,As在表面膜中有很大的富集。富集的程度与微量元素氧化物的生成热有关。XPS研究结果表明,只有Ga,Ge,As,Al,Zn在最表层2—3nm内富集。富集的结果改变了氧化膜的组成和结构。微量元素以氧化物的形式同SnO组成复杂的含氧酸盐而构成氧化膜,并因此使氧化膜变得更稳定和致密,起了保护液态Sn免于氧化的作用。
A study has been made of the distribution of an individual trace element, namely, P, As, Ga, Ge, In, Al, Mg, Zn, Cu, Ag, Cd, Pb, Sb, Tl or Bi, between the surface film and bulk Sn metal by means of analyzing the skimmed oxide from the pure molten metal tinwhich 0.005 at.-% each of the mentioned elements was added under 310℃. The results indicated that Ga, P, Ge, Mg, Zn, Al, In or As is enriched in the surface film, and its enrichment appears to be concerned with the higher heat of formation of relative oxide. The surface oxide film was detected by X-ray diffraction as complex oxy-acid salts of SnO and oxid eof enriched element. Because of an irreversible reaction, the surface structure could be remained till solidification. The XPS research on the solidified samples revealed that the only elements, e.g. Ga, Ge, As, Al and Zn are enriched within a very thin outer layer, about 2—3 nm thick, of the surface film, as a result of the modification and stabilization of its constitution and structure. Thus the liquid Sn may be protected free from further oxidation.
参考文献
| [1] | |
| [2] | Barin, I. |
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