<正> 本工作是在电子显微镜内原位加热的同时,观察α-Pd_(80)Si_(20)的氧化过程及其对晶化的影响。 用双喷制备的试样安装在JEM-200CX电子显微镜的加热台上,以不同的速度进行加热,并对氧化过程进行原位观察。试样室的真空度保持在～10~(-5)Pa,然后将原位观察过的试样,在Auger谱仪中用Ar~+离子对试样表面逐层剥离,以分析成分随深度的变化。为了对比,试样也在Auger谱仪中(真空度～10~(-7)Pa)进行加热,观察表面层成分随温度的变化。
Surface oxidation of amorphous Pd_(80)Si_(20) was studied by in situ observation in JEOL-200CX electron microscope under vacuum about 10~(-5) Pa and AES. An amorphous oxide layer formed evidently on the surface of the α-Pd_(80)Si_(20) specimen at a temperature around 120℃. During heating, owing to the inward movement of Si-atoms and surface oxidation, the Si content along the edge of a wedge specimen and on the surface layers of the matrix increased, and therefore made the thermal stability decreased.
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