欢迎登录材料期刊网

材料期刊网

高级检索

综述了近年来国内外NiO/ZnO薄膜太阳能电池的研究进展,重点介绍了有无掺杂的NiO/ZnO薄膜太阳能电池的制备方法及电性能指标,并简要分析了该异质结薄膜太阳能电池存在的问题和未来发展动向,认为未来NiO/ZnO薄膜太阳能电池的研究应集中在通过选择掺杂元素以及引入中间层来提高电学特性.

参考文献

[1] Puspharajah P.;Arof AK.;Radhakrishna S. .TRANSPARENT CONDUCTING LITHIUM-DOPED NICKEL OXIDE THIN FILMS BY SPRAY PYROLYSIS TECHNIQUE[J].Journal of Materials Science,1997(11):3001-3006.
[2] Gupta, RK;Ghosh, K;Kahol, PK .Fabrication and characterization of NiO/ZnO p-n junctions by pulsed laser deposition[J].Physica, E. Low-dimensional systems & nanostructures,2009(4):617-620.
[3] 倪曼曼 .基于ZnO的异质结的组建及其光电性能研究[D].河南大学,2010.
[4] 张国宏,祁康成,权祥,文永亮.磁控溅射NiO/ZnO透明异质结二极管及其光电特性研究[J].电子器件,2011(01):33-35.
[5] Shu-Yi Tsai;Min-Hsiung Hon;Yang-Ming Lu .Fabrication Of Transparent P-Nio/N-Zno Heterojunction Devices For Ultraviolet Photodetectors[J].Solid-State Electronics,2011(1):37-41.
[6] 张兴来 .ZnO薄膜的制备和紫外探测器的研究[D].长春理工大学,2010.
[7] 邓蕊 .ZnO基光电薄膜的物性研究及光电器件的设计与制备[D].长春:吉林大学,2011.
[8] Xinman Chen;Kaibin Ruan;Guangheng Wu;Dinghua Bao .Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO[J].Applied physics letters,2008(11):112112-1-112112-3-0.
[9] Sta Imen;Jlassi Mohamed;Hajji Massoud.Fabrication and characterization of NiO/ZnO p-n junctions by solgel spin coating technique[A].Hammamet,2012:113.
[10] Eneko Azaceta;Sudam Chavhan;Paola Rossi;Marzia Paderi;Sebastien Fantini;Mariana Ungureanu;Oscar Miguel;Hans-Jurgen Grande;Ramon Tena-Zaera.NiO cathodic electrochemical deposition from an aprotic ionic liquid: Building metal oxide n-p heterojunctions[J].Electrochimica Acta,2012:39-43.
[11] Tsai Wei-Chin;Wang Shui-jinn;Tseng Chin-ren.Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics[A].Prague,2009
[12] Ji Hoon Yang;Seung Youb Lee;Woo Seok Song;Yong Sook Shin;Chong-Yun Park;Hyun-Jin Kim;Wontae Cho;Ki-Seok An .Field emission properties of ZnO nanorods coated with NiO film[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2008(3):1021-1024.
[13] Jen-Yi Wang;Chun-Yu Lee;Yung-Ting Chen;Chung-Tse Chen;Yung-Ling Chen;Ching-Fuh Lin;Yang-Fang Chen .Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions[J].Applied physics letters,2009(13):131117-1-131117-3.
[14] Hiromichi Ohta;Masao Kamiya;Toshio Kamiya;Masahiro Hirano;Hideo Hosono .UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(2):317-321.
[15] Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO[J].Applied physics letters,2003(5):1029-1031.
[16] 赵启义,祁康成,舒文丽,李国栋.氮气退火对NiO/ZnO:Al薄膜PN结的影响[J].电子器件,2012(01):11-14.
[17] Jaydip Mistry;Mistry B V;Trivedi U N.Fabrication and electrical properties of transparent n-ZnO ∶ Al/p-NiO ∶Li junction[A].Manipal,India,2011:725.
[18] Sato H;Minami T;Takata S et al.Transparent conducting p-type NiO thin films prepared by magnetron sputtering[J].Thin Solid Films,1993,236(1-2):27.
[19] Hao Long;Guojia Fang;Huihui Huang;Xiaoming Mo;Wei Xia;Binzhong Dong;Xianquan Meng;Xingzhong Zhao .Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes[J].Applied Physics Letters,2009(1):013509-1--013509-3-0.
[20] Titas Dutta;P. Gupta;A. Gupta;J. Narayan .Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in heteroepitaxial p-n junctions[J].Journal of Applied Physics,2010(8):083715-1-083715-7.
[21] 杨治国 .NiO/ZnO基半导体异质结及MgNiO固溶体薄膜的制备与性能研究[D].浙江大学,2011.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%