InSb单晶材料具有相当高的载流子迁移率,因而有良好的电学性能.本文采用缓慢凝固技术制备出In-Sb-Ge三元合金,并在320 K到706 K的温度范围内测量其热电性能.显微结构观察表明,In-Sb-Ge三元合金的微观组织由嵌入含锗相的锑化铟相组成,这一结果与X射线衍射分析的结果相符.性能测试表明,其晶格热导率在整个温度范围内都非常低,尤其在低温下更低,而载流子热导率随温度的升高,从6.3(W·m~(-1)·K~(-1))降低到2.4(W·m~(-1)·K~(-1)),在热传输过程中起主要作用.在708 K时In_(10)Sb_(10)Ge合金的最高ZT值为0.18.
It was reported that InSb single crystal has an excellent thermoelectric power factor due to its extremely high carrier mobility. In the present work we prepared Ge-added ternary In-Sb-Ge alloy using a mild solidification technique and evaluated its thermoelectrig properties in the temperature range from 320 K to 708 K. Observations reveal that the microstructure is composed of the InSb phase with Ge-containing phase embedded, which is in agreement with the X-ray analysis. Measurements show that the lattice thermal conductivities are very low over the entire temperature range, especially at low temperatures, while the electronic component reduces from 6.3 to 2.4 (W · m~(-1)· K~(-1)) with increasing temperature, and plays a dominant role in carrying heat. The highest thermoelectric figure of merit ZT of 0.18 can be achieved for In_(10) Sb_(10) Ge at 708 K.
参考文献
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