用双离子束溅射法制备了SiOxNy薄膜,并对薄膜的结构和光致发光(PL)性质进行了研究.XRD和TEM的实验结果表明薄膜是非晶结构;用XPS对样品进行了表征,在397.8eV位置处出现一个对应于N1s的对称峰,表明样品中的N原子主要与Si原子结合,FTIR的实验结果也说明了这一点.光吸收测量结果显示SiOxNy薄膜的光学带隙比Si-SiO2薄膜宽.在225nm波长的激发下,测得在590nm处有强的黄光发射,并利用能带模型讨论了可能的发光机制.
In this work, results of the study on the structure and photoluminescence (PL) properties of SiOxNy thin films are presented. The films were deposited at room temperature using a dual ion beam co-sputtering system. The XRD and TEM results show that the deposited films have an amorphous structure. In the XPS result, we find N1s spectrum consists of a symmetric single peak at 397. 8eV, which indicates that the nitrogen atoms are mainly bonded to silicon. It is in agreement with the result of FTIR. From the optical absorption measurement, we find that the optical band gap of SiOx Ny thin film is widened compared with that of Si-SiO2 thin film. In SiOxNy films, an intense single PL peak at 590nm produced by 225nm excitation is observed. The PL peak of 590nm is proposed to originate from N-related defects after the discussion on our experiment results.
参考文献
| [1] | Canham L T .[J].Applied Physics Letters,1990,57:1046. |
| [2] | Littau K A;Szajowski P F;Muller A J et al.[J].Journal of Chemical Physics,1993,97:1224. |
| [3] | Ruckschloss M;Landkammer B;Veprek S .[J].Applied Physics Letters,1993,63:1474. |
| [4] | Shimizu-Iwayama T;Fujita K;Nakao S et al.[J].Journal of Applied Physics,1994,75:7779. |
| [5] | Ribeiro M.;Pereyra I.;Alayo MI. .Silicon rich silicon oxynitride films for photoluminescence applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):200-204. |
| [6] | Modreanu M;Tomozeiu N;Cominand P.[A].,1998:201. |
| [7] | Kuiper A E;Willemsen M F C;Mulder J M L .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1989,7:455. |
| [8] | Firon M.;Mayeux A.;Bonnelle C. .CHARACTERIZATION OF SILICON OXYNITRIDE THIN FILMS BY INFRARED REFLECTION ABSORPTION SPECTROSCOPY[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1996(4):2488-2492. |
| [9] | del prado A;Martil I;Fernadez M et al.[J].Thin Solid Films,1999,343:437. |
| [10] | Yee A L .[J].Materials Research Society,1995,6:161. |
| [11] | Demichelis F;Pirri C F;Tresso E .[J].Journal of Applied Physics,1992,72:1327. |
| [12] | Delaplanke M P;Powers J M;Vandetop G J et al.[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1991,9:450. |
| [13] | Kaluri S R;Hess D W .[J].Applied Physics Letters,1996,69:1053. |
| [14] | Bouvet D.;Dutoit M.;Coluzza C.;Almeida J.;Margaritondo G. Pio F.;Clivaz PA. .INFLUENCE OF NITROGEN PROFILE AN ELECTRICAL CHARACTERISTICS OF FURNACE- OR RAPID THERMALLY NITRIDED SILICON DIOXIDE FILMS[J].Journal of Applied Physics,1996(9):7114-7122. |
| [15] | Wittberg T N;Hoenigman J R;Moddeman W E et al.[J].Journal of Vacuum Science and Technology,1978,15:348. |
| [16] | Lange P;Bernt H;Hartmannsgruber E et al.[J].Journal of the Electrochemical Society,1994,141:259. |
| [17] | Shallenberger J R;Cole D A;Novak S W .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1999,17:1086. |
| [18] | Pai P G;Chao S S;Takagi Y .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1986,4:689. |
| [19] | Ribeiro M.;Pereyra I.;Alayo MI. .Silicon rich silicon oxynitride films for photoluminescence applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):200-204. |
| [20] | Robertson J;Powell M J .[J].Thin Solid Films,1999,337:32. |
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