用透射电子显微镜和Ｘ射线衍射方法研究Ｓｉ衬底上的Ｃｏ薄膜氧化．发现：在５５０℃以下，薄膜氧化产物是ＣｏＯ；在９００℃再次进行真空热处理，ＣｏＯ能转变为硅化物．薄膜氧化，对Ｃｏ／Ｓｉ界面硅化物转变有影响．
The oxidation of Co film on Si substrate during heat treatment was studied by TEM and XRD. The oxidized product of the film, annealed below 550℃, was found to be CoO, and to change into a silicide after further heating under vacuum at 900℃. The oxidation of the film has an important effect on the Co/Si interface reaction.
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| [7] | Arnaud．J．d'Avitaya,ChroboczekY,d'AnterrocherC,GlastreG,CampidelliY,RosencherE．JCrystGrowth,1987:81 |
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