采用激光刻蚀,辅以化学溶液腐蚀对多晶硅片进行了表面织构.利用扫描电镜(SEM)、Helios LAB-rc反射率测试仪和Semilab WT2000少子寿命仪对样品进行了表征.结果表明,多晶硅表面经激光织构后表现出很好的陷光效果,反射率降低为8.0％.激光织构使硅片的少子寿命缩短,通过沉积Al2O3钝化薄膜可改善多晶硅片的电学性能.
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