采用中频反应磁控溅射方法,在钼/聚酰亚胺/硅(Mo/PI/Si)基片上室温下制备出c轴取向柱状结晶氮化铝(AlN)薄膜,X射线衍射摇摆曲线和拉曼谱E2(高)峰半高宽分别是2.2°和18.6 cm-1.制作了基于Mo/AlN/Mo/PI/Si结构的薄膜体声波谐振器(FBARs),PI/Mo异质结用作声绝缘层.用矢量网络分析仪分析了FBARs的谐振特性,器件等效耦合系数达到5.4％.
参考文献
| [1] | Kenneth M Lakin .[J].IEEE Transactions on Ultrasonics,Ferroelectrics,and Frequency Control,2005,52:5. |
| [2] | Si-Hyung Lee;Jeon-Kook Lee;Ki Hyun Yoon .Growth of highly c-axis textured AlN films on Mo electrodes for film bulk acoustic wave resonators[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2003(1):1-5. |
| [3] | Yamauchi N;Shirai T;Yoshihara T et al.[J].Applied Physics Letters,2009,94:172903. |
| [4] | Zhang R;Lee E;Yoon G .[J].Electronics Letters,2010,46:9. |
| [5] | Chen Y;Reyes P I;Duan Z et al.[J].Journal of Electronic Materials,2009,38:1605. |
| [6] | Duboi s M A;Billard C;Muller C et al.[J].IEEE Journal of Solid-State Circuits,2006,41:7. |
| [7] | Ikeda S;Yanagimoto H;Akamatsu K;Nawafune H .Copper/polyimide heterojunctions: Controlling interfacial structures through an additive-based, all-wet chemical process using ion-doped precursors[J].Advanced functional materials,2007(6):889-897. |
| [8] | Chun-Hung Hsueh;Chia-Che Wu .[J].Smart Materials and Structures,2010,19:124005. |
| [9] | Akiyama M;Morofuji Y;Kamohara T;Nishikubo K;Ooishi Y;Tsubai M;Fukuda O;Ueno N .Preparation of oriented aluminum nitride thin films on polyimide films and piezoelectric response with high thermal stability and flexibility[J].Advanced functional materials,2007(3):458-462. |
| [10] | Vincent Malba;Vladimir Liberman;Anthony F Bernhardt .[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1997,15:3. |
| [11] | John A Kreuz;James R Edman .[J].Advanced Materials,1998,10:15. |
| [12] | Kuball M;Hayes J M;Ying Shi et al.[J].Applied Physics Letters,2000,77:1958. |
| [13] | Sarua A.;Kuball M.;Van Nostrand JE. .Deformation potentials of the E-2(high) phonon mode of AlN[J].Applied physics letters,2002(8):1426-1428. |
| [14] | Gleize J;Demangeot F;Frandon J et al.[J].Physica Status Solidi A:Applied Research,2001,188:511. |
| [15] | Sang-Hee Kim;Jong-Heon Kim;Hee-Dae Park et al.[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,2001,19:4. |
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