碳纳米管场发射薄膜发射电流变化的理论分析

材料导报, 2008, 22(3): 16-18.

碳纳米管场发射薄膜发射电流变化的理论分析

饶早英 ^1, , 王蜀霞 ^2, , 梁孝云 ^3, , 杨云青 ^4, , 胡慧君 ^5, , 牛君杰 ^6,

1.重庆大学数理学院物理系,重庆400044

2.重庆大学数理学院物理系,重庆400044

3.湖北省巴东县雷家坪中学,巴东444301

4.重庆大学数理学院物理系,重庆400044

5.重庆大学数理学院物理系,重庆400044

6.重庆大学数理学院物理系,重庆400044

基金项目: 重庆市自然科学基金(CSTC2006BB4018)

关键词：场发射 , 热电子发射 , 势垒 , 位相变化

Theoretical Analyses of Change of Field Emission Current of Carbon Nanotubes Film

碳纳米管薄膜具有优于传统发射器件的场发射特征,但它的场发射电流曲线只在低场区与特征曲线符合较好,在高场区偏离特征曲线.讨论了热电子发射、量子隧穿导致的位相改变对发射电流的影响,分析了场发射电流、位相的变化,解释了高场区发射电流曲线偏离的原因.

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碳纳米管场发射薄膜发射电流变化的理论分析

Theoretical Analyses of Change of Field Emission Current of Carbon Nanotubes Film

参考文献