讨论了碱性化学镀铜成分中CuSO4、还原剂HCHO以及NaOH的浓度对化学镀效果的影响,得到了适合超大规模集成电路铜金属化的化学镀溶液成分.然后研究了酸性和碱性化学镀铜结合方法在铜布线制造方面的应用.首先采用分离酸性化学镀方法在TiNi/Ti/SiO2/Si基板的TiN进行化学镀,制造一层铜籽晶层,而后采用碱性化学镀铜方法制造铜膜.通过对化学镀铜膜形貌和结晶方面的研究发现:籽晶层对铜膜最终形貌和择优取向有较大的影响.
参考文献
[1] | Edelstein DC.;Mii YJ.;Saihalasz GA. .VLSI ON-CHIP INTERCONNECTION PERFORMANCE SIMULATIONS AND MEASUREMENTS[J].IBM journal of research and development,1995(4):383-401. |
[2] | Zhang J Y;Boyd I W .[J].Thin Solid Films,1998,318:234. |
[3] | Lee MK.;Wang HD.;Wang JJ. .DEPOSITION OF COPPER FILMS ON SILICON FROM CUPRIC SULFATE AND HYDROFLUORIC ACID[J].Journal of the Electrochemical Society,1997(5):1777-1780. |
[4] | Desilva MJ.;Shachamdiamand Y. .A NOVEL SEED LAYER SCHEME TO PROTECT CATALYTIC SURFACES FOR ELECTROLESS DEPOSITION[J].Journal of the Electrochemical Society,1996(11):3512-3516. |
[5] | Brand F et al.[J].Applied Surface Science,1995,91:251. |
[6] | Park KC.;Raaijmakers IJMM.;Ngan K.;Kim KB. .THE EFFECT OF DENSITY AND MICROSTRUCTURE ON THE PERFORMANCE OF TIN BARRIER FILMS IN CU METALLIZATION[J].Journal of Applied Physics,1996(10):5674-5681. |
[7] | Wang M T et al.[J].Journal of the Electrochemical Society,1998,145:2538. |
[8] | Ono H et al.[J].Applied Physics Letters,1994,64:1511. |
[9] | Chin B.[J].SOLID STATE TECHNOLOGY,1998(07):141. |
[10] | Shacham-Diamand Y et al.[J].Thin Solid Films,1995,93:262. |
[11] | Tseng W T et al.[J].Journal of the Electrochemical Society,2001,148:C327. |
[12] | Tseng W T et al.[J].Journal of the Electrochemical Society,2001,148:C333. |
[13] | 杨志刚,钟声.化学镀铜在超大规模集成电路中的应用和发展[J].功能材料,2004(z1):1049-1053. |
[14] | Zhong S et al.[J].Journal of the Electrochemical Society,2005,152:C466. |
[15] | Zhong S et al.[J].Journal of the Electrochemical Society,2005,148:C143. |
[16] | 毛卫民,张弘.大规模集成电路导电薄膜的织构效应[J].北京科技大学学报,2000(06):539-542. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%