应用拉曼光谱研究了5 MeV Kr离子(注量分别为5×1013,2×1014,1×1015ions/cm2)室温注入6H-SiC单晶及其高温退火处理后结构的变化.研究表明,注入样品的拉曼光谱中不仅出现了Si-C振动的散射峰,还产生了同核Si-Si键和C-C键散射峰.Si-C散射峰强度随退火温度升高而增强,当退火温度高达1000℃时,已接近未辐照SiC的散射峰强度.晶体Si-Si键散射峰强度随退火温度变化不大,而非晶Si-Si键散射峰强度随退火温度的增加逐渐消失.相对拉曼强度(Relative Raman Intensity,简称RRI)随注量的增加逐渐减小并趋于饱和,且不同退火温度样品的饱和注量不相同;RRI随退火温度的增加逐渐升高,这在低注量样品中表现得尤为明显.低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离,并且退火温度越高,分离越大.
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