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本文采用自主研制的直流弧光放电等离子体CVD设备,在YG6硬质合金基体上进行了不同氩气流量下金刚石薄膜的制备研究.采用SEM对金刚石薄膜的晶体特征进行了观察.结果表明,氩气对直流弧光放电等离子体CVD金刚石薄膜的晶体特征有明显影响.在CH_4/H_2恒定时(0.8%),硬质合金基体上制备的金刚石薄膜表面形貌随Ar流量增加而变化的规律,即从以(111)八面体晶面为主→(111)和(100)立方八面体混杂晶面→以(100)立方体晶面为主→菜花状的顺序转变;当Ar流量为420~700 mL/min时,金刚石晶粒的平均尺寸由1.5 μm 逐步增大到7 μm;Ar流量为700~910 mL/min时,金刚石晶粒的平均尺寸由7 μm急剧减小到纳米尺度,约50 nm.

参考文献

[1] May PW. .Diamond thin films: a 21st-century material[J].Philosophical transactions of the Royal Society. Mathematical, physical, and engineering sciences,2000(1766):473-495.
[2] Chen W;Lu X;Yang Q;Xiao C;Sammynaiken R;Maley J;Hirose A .Effects of gas flow rate on diamond deposition in a microwave plasma reactor[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(4):1970-1975.
[3] Zhu W;Inspektor A;Badzian A R et al.Effects of Noble Gases on Diamond Deposition from Methane-hydrogen Microwave Plasma[J].Japanese Journal of Applied Physics,1990,68:1489.
[4] Matsumoto S;Hino M;Toyohiko K .Synthesis of Diamond Films in a RF Induction Thermal Plasma[J].Applied Physics Letters,1987,51:737-739.
[5] Han Y S;Kim Y K;Lee J Y .Effects of Argon and Oxygen Addition to the CH_4-H_2 Feed Gas on Diamond Synthesis by Microwave Plasma Enhanced Chemical Vapor Deposition[J].Thin Solid Films,1997,310:39-46.
[6] Knights J C;Lujan R A;Rosenblum M P et al.Effects of Inert Gas Dilution of Silane on Plasma-deposited a-Si:H Films[J].Applied Physics Letters,1981,38(05):331-333.
[7] Shih H C;Hsu W T;Hwang C T et al.Application of Nickel Plating for the Synthesis of Chemical Vapour Deposition of Diamond on Steels[J].Thin Solid Films,1993,236(1-2):111-114.
[8] Yang T S;Lai J Y;Cheng L C et al.Crowth of Faceted,Ballas like and Nanocrystalline Diamond Films Deposited in CH_4/H_2/Ar MPCVD[J].Diamond and Related Materials,2001,10:2161-2166.
[9] 张湘辉,汪灵,龙剑平,常嗣和,周九根.直流弧光放电等离子体CVD金刚石薄膜中的晶体类型与特征[J].矿物岩石,2005(03):100-104.
[10] 陈素纯.矿物材料合成的直流弧光法[J].大地构造与成矿学,1996(02):186-187.
[11] Lee J K;Bailk Y J;Eun K Y et al.Effect of Additional Gas on Diamond Deposition by DC PACVD[J].Materials Science and Engineering A,1996,209:399-404.
[12] S. -Tong Lee;Zhangda Lin;Xin Jiang .CVD diamond films: nucleation and growth[J].Materials Science & Engineering, R. Reports: A Review Journal,1999(4):123-154.
[13] Frenklach M;Spear K E .Growth Mechanism of Vapor-deposited Diamond[J].Journal of Materials Research,1988,3:133-140.
[14] Harris S J .Mechanism for Diamond Growth from Methyl Radicals[J].Applied Physics Letters,1990,56:2298.
[15] 陈杰瑢.低温等离子体化学及其应用[M].北京:科学出版社,2001:3-4.
[16] 关维恕;文允鉴;程仕清 等.微波等离子体增强CVD实验装置建造与调试[R].中国核科技报告,1995.
[17] Marton M;Izak T;Vesely M et al.Effect of Argon and Substrate Bias on Diamond Thin Ffilm Surface Morphology[J].Vacuum,2008,82(02):154-157.
[18] Sun B W;Zhang X P;Lin Z D .Growth Mechanism and the Order of Appearance of Diamond (111) Facets[J].Physiological Reviews,1993,47(15):9816-9824.
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