采用溶胶凝-胶法在普通玻璃衬底上制备了具有c轴择优取向的Al掺杂ZnO透明导电薄膜.实验中将热处理过程分解为预烧、空气退火和真空退火三个部分,研究了各个步骤对于ZAO薄膜晶体结构和光电性能的影响.结果表明, 500 ℃预烧550 ℃空气退火的薄膜,经过550 ℃,1×10-2 Pa真空退火后,其晶体结构和光电性能达到最佳,电阻率最低达到1.77×10-3 Ω· cm,可见光范围内的平均透过率约为85%.
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