Optical Properties of Nb+ Ions Implanted Sapphire before and after Annealing

材料科学技术（英文）, 2005, 21(6): 871-874.

^1, , ^2, , ^3, , ^4,

1.Key Laboratory of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China

2.The Institute of Nuclear Physics and Chemistry, China Academe of Engineering Physics, Mianyang 621900, China

3.Key Laboratory of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China

4.Key Laboratory of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China

基金项目: 中国科学院资助项目(10176016)

Optical Properties of Nb+ Ions Implanted Sapphire before and after Annealing

Keywords： Ion implantation

Sapphire crystals with different orientations may cone from implantation of Nb+ ions under different conditions and succedent annealing at reducing atmosphere. Optical analysis results show that the main optical absorption bands lay in the higher energy side of the spectra in the samples. The absorption curves were evaluated by Gaussian fitting based on the F-type centers, which were confirmed by luminescence measurements. The results of Gaussian fitting show that there were F center, F+ center, F2 center, F2+ center and F2+2 center in the Nb+ ions implanted sapphire. After annealing at different temperature, all types of color centers decreased, and the higher the annealing temperature,the more the defects decreased. Sub-micrometer particles were observed by the scanning electron microscopy.

参考文献

[1]	George W Arnold .[J].Nuclear Instruments and Methods,1993,80-81:1036.
[2]	T Hioki;A Itoh;M Ohkubo;S Noda,H Doi,J Kawamoto,O Kamigaito .[J].Journal of Materials Science,1986,21:1321.
[3]	C J Mchargue;W B Smyder .[J].SPIE,1993,2018:135.
[4]	N Gurauie;D N Jamieson;R Szymsanski;A V Orlov,J S Williams,M Conway .[J].Nuclear Instruments and Methods,1999,147:221.
[5]	M Ikeyama;S Nakao;M Tazawa;K Kadono,K Kamada .[J].Nuclear Instruments and Methods,2001,652:175.
[6]	H W Lehmann;Hs H Gunthard .[J].Journal of Physics and Chemistry of Solids,1964,25:941.
[7]	K H Lee;J H Crawford .[J].Physical Review B,1977,15(08):4065.
[8]	G J Pogatshnik;Y Chen;B D Evans .[J].IEEE Transactions on Nuclear Science,1987,34(06):1079.
[9]	B D Evans;G J Pogatshnik;Y Chen .[J].Nuclear Instruments and Methods,1994,91:258.
[10]	T Tanabe;M Fujiwara;K Miyazaki .[J].Journal of Nuclear Materials,1996,233-234:1344.
[11]	K Aono;H Toida;K Terashima;M Iwaki .[J].Nuclear Instruments and Methods,2001,175-177:580.
[12]	E Alves;C Marques;L C Onony;C McHargue .[J].Nuclear Instruments and Methods,2004,218:222.
[13]	E Alves;R C da Silva;M F da Silva;J C Soares .[J].Nuclear Instruments and Methods,1999,147:226.
[14]	T Monteiro;C Boemare;M J Soares;E Alves,C Marques,C McHargue,L C Ononye,L F Allard .[J].Nuclear Instruments and Methods,2002,191:638.
[15]	C Marques;E Alves;R C da Silva;M R Silva,A L Stepanov .[J].Nuclear Instruments and Methods,2004,218:139.
[16]	C Marques;M M Cruz;R C da Silva;E Alves .[J].Surface and Coatings Technology,2002,158-159:54.
[17]	N K Huang;K Neubeck;S Yamamoto;Y Aoki,H Abe,K Narumi,A Miyashita,H .[J].Naramoto Phys Status Solidi,1998,165:367.
[18]	B D Evans;M Stapelbrock .[J].Physical Review B,1978,18:7089.
[19]	B G Draeger;G P Summers .[J].Physical Review,1979,19:1172.
[20]	N K Huang;B Tsuchiya;K Neubeck;S Yamamoto,K Narumi,Y Aoki,H Abe,A Miyashita,H Ohno,H Naramoto .[J].Nuclear Instruments and Methods,1998,143:479.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

Optical Properties of Nb+ Ions Implanted Sapphire before and after Annealing

参考文献