采用水平定向结晶法(HDS)成功生长出了质量优异的板状蓝宝石晶体.利用光学显微镜,扫描电镜(SEM),并结合化学腐蚀法对生长出的蓝宝石晶体不同位置的样品进行宏观缺陷及微观位错形貌的观测和研究,分析了水平定向结晶法生长蓝宝石晶体的宏观缺陷类型和位错的形貌,探讨了该缺陷在晶体中的分布规律及其形成原因.实验结果发现晶体的宏观缺陷主要包括气泡和包裹体.并结合能谱(EDS)测试包裹体的成分,分析其形成的原因.结果表明块状或絮状的小尺寸包裹体主要是由于C,Si杂质聚集原料中的其它杂质形成；长条形或圆形的大尺寸包裹体是由于Al,O元素的化学计量比严重适配,造成固液界面局部组分过冷形成.结合化学腐蚀法,发现该晶体的位错形貌均为三角型腐蚀坑,并探讨了晶体中位错的形态.
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