欢迎登录材料期刊网

材料期刊网

高级检索

主要研究了利用分子动力学方法(MD)模拟等离子体与材料表面相互作用过程时分子动力学方法的参数对模拟结果的影响.详细分析了Berendsen热浴的应用时间、耦合强度和模拟时间量(单个轨迹的作用时间、弛豫时间)对模拟结果的影响,结果表明,热浴的应用时间对模拟结果的影响很大,而其它参数对模拟结果没有太大的影响.

The purpose of this paper is to investigate the effects of parameters on molecular dynamics method.The effects of the application time of heat bath, coupling strength and simulation time-scale(integration time, relaxation time) on the etching are shown. The simulation results show that the heat-bath application time have the significantly effect on the etching. The other parameters relevant to the MD method have no slight influence on the etching.

参考文献

[1] Abrams C F;Graves D B .Atomistic simulation of fluorocarbon deposition on Si by continuous bombardment with energetic CF+ and CF2 +[J].J Vacuum Sci Techn A,2001,19(01):175.
[2] Abrams C F;Graves D B .Molecular dynamics simulations of Si etching by energetic CF3+[J].Journal of Applied Physics,1999,86(11):5938.
[3] B. A. Helmer;D. B. Graves .Molecular dynamics simulations of fluorosilyl species impacting fluorinated silicon surfaces with energies from 0.1 to 100 eV[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1997(4):2252-2261.
[4] Barone M E;Graves D B .Chemical and physical sputtering of fluorinated silicon[J].Journal of Applied Physics,1995,77(03):1263.
[5] Smirnov V V;Stengach A V;Gaynullin K G et al.Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 Ⅰ.Basic model and CF2 +-ion etch characterization[J].Journal of Applied Physics,2005,97(09):093302.
[6] Schoolcraft T A;Garrison B J .Initial stages of etching of the Si(100) (2×1) surface by 3.0eV normal incident fluorine atoms:A molecular dynamics study[J].Journal of the American Chemical Society,1991,113(08):221.
[7] Gou F;Xie Q;Zhu L;Sun WL;Ming X .Interaction of SiF3 with silicon surface: Molecular dynamics simulation[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2006(1):113-116.
[8] Gou F .Molecular dynamics simulation of deposition and etching of Si bombarding by energetic SiF[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(12):5467-5472.
[9] Gou F;Sun Weili;Xu Ming .Molecular dynamics simulation of deposition and etching of Si bombarding by energetic SiF3[J].VACUUM,2006,15:695.
[10] Gou F;Chen LZT;Meng C;Qian Q .Molecular dynamics simulations of reactive etching of SiC by energetic fluorine[J].Applied physics, A. Materials science & processing,2007(2):385-390.
[11] Gou F;Liang MC;Chen Z;Qian Q .Etching of SiC by energetic F-2: Molecular dynamics simulation[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(21):8743-8748.
[12] 朱林山,金石声,苟富均,谢泉.低能入射Si与Si(001)2×1重构表面相互作用过程的分子动力学模拟[J].半导体学报,2007(11):1748-1755.
[13] Abrams C F;Graves D B .Atomistic simulation of silicon bombardment by energetic CF3 +:Product distributions and energies[J].Thin Solid Films,2000,374(01):150.
[14] Abrams C F;Graves D B .Energetic ion bombardment of SiO2 surfaces:Molecular dynamics simulations[J].J Vacuum Sci Techn A,1998,16(05):3006.
[15] F.Gou;M.A.Gleeson;A.W.Kleyn .Theoretical modeling of energy redistribution and stereodynamics in CF scattering from Si(100) under grazing incidence[J].Physical chemistry chemical physics: PCCP,2006(47):5522-5534.
[16] David Humbird;David B. Graves .Fluorocarbon plasma etching of silicon: Factors controlling etch rate[J].Journal of Applied Physics,2004(1):65-70.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%