首先采用改性Hummers法制备了氧化石墨烯(GO)分子膜,然后通过电泳沉积(EPD)技术在Cu箔上电化学沉积了氧化石墨烯膜(EPD-GO),最后导入氢气气氛(800℃)下退火还原,得到大面积导电石墨烯薄膜(TR-GE).利用X射线衍射(XRD)、拉曼(Raman)光谱、场发射扫描电镜(FESEM)、高分辨透射电镜(HRTEM)、四探针测试仪和电化学工作站分别研究了各阶段产物的物相、形貌、谱学、导电性和电容性能,证明了所制备的石墨烯薄膜具有良好的机械柔韧性和导电性能;同时,还对石墨烯薄膜的成膜及导电性能优化机理进行了探讨.
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