采用固相反应法制备了不同比例的碱金属掺杂ZnO靶材,并利用磁控溅射法在Si(111)基片上制备不同温度下生长的c轴择优取向ZnO薄膜.通过XRD、AFM和荧光光谱(PL谱)研究了掺杂元素和掺杂比例对薄膜结构和发光特性的影响.结果表明,掺杂未改变ZnO的结构,薄膜具有很好的c轴择优取向.室温下用325 nm的氙灯作为激发光源得到不同样品的 PL 谱,分析表明,紫外发光峰来源于自由激子的复合辐射与带间跃迁,蓝绿发光峰与锌缺陷和氧缺陷有关.此外还探讨了紫外发光峰红移的可能机理.
The compounds of ZnXO (X=Li, Na and K) were prepared by a convention solid reaction method and the highly c-axis oriented ZnXO (X=Li, Na and K) thin films were deposited on Si (111) substrates by magnetron sputtering method. The structures,surface morphology and the luminescent properties of thin films were measured by X-ray diffraction(XRD), atomic force microscopes(AFM) and photoluminescence(PL).The results indicated that the ZnXO thin films show good c-axis orientation. Different PL spectra were acquired at room temperature using xenon lamps as excitation light sources, with excitation wavelengths of 325 nm. The UV peaks and violet peaks were found to originate from free excition radiation recombination and the PL intensity was related to crystalline quality, and the blue-green peaks may be related to the zinc and oxygen vacancies. The physical mechanism was disscussed throngh which the red shift of UV PL peaks.
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