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采用高温固相法制备了Pr和Nb共掺杂Bi_4Ti_3O_(12)铁电陶瓷.利用XRD分析表征了样品物相结构,利用阻抗分析仪和铁电性能测量仪测试了样品的电性能,并通过对样品电导率与温度的关系进行Arrhenius拟合分析了材料的导电机理.结果表明:Pr和Nb已经完全固溶进入Bi_4Ti_3O_(12)晶格中,制备的样品均为单一的层状钙钛矿结构.Nb的引入使样品的介电常数变大,介电损耗明显降低,但居里温度变化不大.在Nb掺杂量较小(x≤0.09)时,材料的剩余极化值随着Nb掺杂量增加而增大,当x=0.09时2P_r达到极大值为26 μC/cm~2,矫顽场为50.3 kV/cm.这主要是由于高价态的Nb~(5+)取代B位Ti~4+能有效的抑制氧空位的产生.

参考文献

[1] Cummins S E;Cross L E .Crystal Symmetry,Optical Properties,and Ferroelectric Polarization of Bi_4Ti_3O_(12) Single Crystals[J].Applied Physics Letters,1967,10:14-16.
[2] 蒲永平,王瑾菲,赵新,杨公安,陈小龙,吴胜红.高居里点(1-x)Ba_(0.998)La_(0.002)TiO_3+xBi_4Ti_3O_(12)系统陶瓷微观结构及温度特性的研究[J].人工晶体学报,2009(05):1119-1122.
[3] 杨冬梅,韩建儒,袁春雪,姜付义.化学溶液分解法制备Sm0.5Bi3.5Ti3O12铁电薄膜[J].人工晶体学报,2006(06):1265-1267.
[4] 王瑾菲,蒲永平,杨公安,庄永勇,杨文虎,毛玉琴.Sm掺杂Bi4Ti3O12陶瓷晶体结构及电性能的研究[J].人工晶体学报,2009(04):866-869,892.
[5] S. S. Kim;T. K. Song;J. K. Kim;Jinheung Kim .Ferroelectric properties of vanadium-doped Bi_(4)Ti_(3)O_(12) thin films deposited by a sol-gel method[J].Journal of Applied Physics,2002(4):2213-2215.
[6] Tang QY;Kan YM;Li YG;Zhang GJ;Wang PL .Ferroelectric and dielectric properties of Nd/V co-doped Bi(4)Ti(3)0O(12) ceramics[J].Solid State Communications,2007(1/2):1-5.
[7] S.K. Singh;H. Ishiwara .Ferroelectric properties enhancement in niobium-substituted Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared by chemical solution route[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):90-95.
[8] 张丽娜,李国荣,赵苏串,郑嘹赢,殷庆瑞.Nb掺杂Bi4Ti3O12层状结构铁电陶瓷的电行为特性研究[J].无机材料学报,2005(06):1389-1395.
[9] M. Chen;Z.L. Liu;Y. Wang;C.C. Wang;X.S. Yang;K.L. Yao .Ferroelectric properties of Pr_6O_(11)-doped Bi_4Ti_3O_(12)[J].Solid State Communications,2004(11):735-739.
[10] Kingery W D.陶瓷导论[M].北京:中国建筑工业出版社,1982:455-464.
[11] Bao Z H;Yao Y Y;Zhu J S et al.Study on Ferroelectric and Dielectric Properties of Niobium Doped Bi_4Ti_3O_(12) Ceramics and Thin Films Prepared by PLD Method[J].Materials Letters,2002,56:861-866.
[12] Li W;Chen K;Yao Y Y et al.Correlation Among Oxygen Vacancies in Bismuth Titanate Ferroelectric Ceramics[J].Applied Physics Letters,2004,85:4717-4719.
[13] C.Voisard;N.Setter .Electrical conductivity of strontium bismuth titanate under controlled oxygen partial pressure[J].Journal of the European Ceramic Society,1999(6/7):1251-1254.
[14] 朱劲松,李伟,陈恺,吕笑梅,王业宁.钛酸铋系中与铁电性能有关的缺陷及其弛豫研究的进展[J].物理学进展,2006(03):351-358.
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