ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES

金属学报(英文版), 1997, 10(1): 10-16.

ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES

HL. Huang , J.H Xing , G.L. Liu and G.Y Zhang(Department of Electrouic Science and Engineering , Liaoning University Shenyang 110036 , China)(Department of Physics , Liaoning University Shenyang 110036 , China)(Shenyang Polytechnic University Shenyan 110023 , China)(Northeast Microelectronic Institute of Ministry of Electronic Industry Shenyang 110032 , China)

Keywords： density of state , null , null , null , null

The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.

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ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES

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