采用射频等离子体增强化学气相沉积（ＣＶＤ）＋负偏压热丝辅助方法直接在Ｓｉ（１００）衬底上制备了多晶Ｃ３Ｎ４薄膜．Ｘ射线衍射测试表明，薄膜同时含有α－和β-Ｃ３Ｎ４晶相以及未知结构，没有观测到石墨衍射峰．利用扫描电子显微镜观测到线度约２μｍ、横截面为六边形的β－Ｃ３Ｎ４晶粒．纳米压痕法测得薄膜的硬度达７２．６６ ＧＰａ．
Polycrystalline carbon nitride thin films were prepared on Si (100) by hot filament assisted rf plasma-enhanced chemical vapor deposition with negative bias methods. X-ray distraction (XRD) spectra indicate that the obtained CN films contain both crystalline β－C3N4 and β-C3N4, and a presently unknown structure. Some crystalline particles of 1-2μm in size with hexagonal cross section exist in the polycrystalline carbon nitride film. The maximum hardness of C3N4 thin film is 72.66GPa.
参考文献
| [1] | Liu A Y, Cohen M L. Science, 1989, 245: 841--842 . [2] Liu A Y, Cohen M L. Phys. Rev. B, 1990, 41 (15): 10727--10374. [3] Teter D M, Hemley R J. Science, 1996, 271: 53--55. [4] Fujimoto F, Ogata K. Jpn. J. Appl. Phys., 1993, 32: L420--L423. [5] Torng C J, Sivertsen J M, Judy J H, et al. J. Mater. Res., 1990, 5: 2490--2496. [6] Chen M Y, Li D, Dravid V P, et al. J. Vac. Sci. Technol., 1993, A11: 521--524. [7] Niu C, LuY Z, Lieber C M. Science, 1993, 261: 334--337. [8] Zhang Y F, Zhou Z H, Li H L. Appl. Phys. Lett., 1996, 68 (5): 634--636. [9] Bousetta A, Lu M, Bensaoula A. J. Vac. Sci. Technol., 1995, A13: 1639--1643. [10] Yu K M, Cohen M L, Haller E E, et al. Phys. Rev. B, 1994, 49(7): 5034--5037. [11] Zhang Y F, Zhou Z H, Li H L. Appl. Phys. Lett., 1996, 68: 634--636. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%