全球电子封装行业的无铅化趋势,使得镀层锡晶须自发生长的问题变得十分突出.由于晶须的导电性可以引起高密度封装引脚之间短路,从而使电子产品失效甚至引发灾难性的事故,因此研究并阐明锡晶须生长机理、探索有效抑制锡晶须生长的手段、寻找合适的锡品须生长加速实验方法评估电子产品的可靠性,成为当前亟需解决的问题.本文从锡晶须问题的由来,锡晶须的危害、锡晶须生长的机理、影响锡晶须生长的因素、抑制锡晶须生长的方法和锡品须生长加速实验方法等几个方面,对锡晶须问题尤其是近年来这方面的研究进展作一简要评述,并提出一些需要研究的课题.
参考文献
[1] | K.S. Kim;C.H. Yu;J.M. Yang .Tin whisker formation of lead-free plated leadframes[J].Microelectronics and reliability,2006(7):1080-1086. |
[2] | W.J. Boettinger;C.E. Johnson;L.A. Bendersky .Whisker and Hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits[J].Acta materialia,2005(19):5033-5050. |
[3] | S. H. Liu;Chih Chen;P. C. Liu;T. Chou .Tin whisker growth driven by electrical currents[J].Journal of Applied Physics,2004(12):7742-7747. |
[4] | 江波,冼爱平.锡镀层表面晶须问题的研究现状与进展[J].表面技术,2006(04):1-4,12. |
[5] | K.N. Tu;J.C.M. Li .Spontaneous whisker growth on lead-free solder finishes[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2005(1/2):131-139. |
[6] | T.H. Chuang;H.J. Lin;C.C. Chi .Rapid growth of tin whiskers on the surface of Sn-6.6Lu alloy[J].Scripta materialia,2007(1):45-48. |
[7] | Tong Fang;Michael Osterman;Michael Pecht .Statistical analysis of tin whisker growth[J].Microelectronics and reliability,2006(5/6):846-849. |
[8] | Courey K. J.;Asfour S. S.;Bayliss J. A.;Ludwig L. L.;Zapata M. C. .Tin Whisker Electrical Short Circuit Characteristics—Part I[J].IEEE transactions on electronics packaging manufacturing: A publication of the IEEE Components, Packaging, and Manufacturing Technology Society,2008(1):32-40. |
[9] | Chen Xu;Yun Zhang;Chonglun Fan;Abys J.A. .Driving force for the formation of Sn whiskers: compressive stress-pathways for its generation and remedies for its elimination and minimization[J].IEEE transactions on electronics packaging manufacturing: A publication of the IEEE Components, Packaging, and Manufacturing Technology Society,2005(1):31-35. |
[10] | Yuki Fukuda;Michael Osterman;Michael Pecht .The impact of electrical current, mechanical bending, and thermal annealing on tin whisker growth[J].Microelectronics and reliability,2007(1):88-92. |
[11] | HIROYUKI MORIUCHI;YOSHIHIRO TADOKORO;MASAHIDE SATO .Microstructure of External Stress Whiskers and Mechanical Indentation Test Method[J].Journal of Electronic Materials,2007(3):220-225. |
[12] | 江波 .无铅镀层中锡晶须生长行为及机制的研究[D].中国科学院金属研究所,2007. |
[13] | Bergauer A.;Eisenmengersittner C.;Barna PB.;Bangert H. .WHISKER GROWTH ON SPUTTERED ALSN (20 WT-PERCENT SN) FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1/2):115-122. |
[14] | K. N. Tu;Chih Chen;Albert T. Wu .Stress analysis of spontaneous Sn whisker growth[J].Journal of Materials Science. Materials in Electronics,2007(1/3):269-281. |
[15] | Kyung-Seob Kim;Jin-Hyeok Kim;Sung-Won Han .The effect of postbake treatment on whisker growth under high temperature and humidity conditions on tin-plated Cu substrates[J].Materials Letters,2008(12/13):1867-1870. |
[16] | Investigation of relation between intermetallic and tin whisker growths under ambient condition[J].Microelectronics and reliability,2008(1):111. |
[17] | Yoshikuni Nakadaira;Seyoung Jeong;Jongbo Shim;Jaiseok Seo;Sunhee Min;Taeje Cho;Sayoon Kang;Seyong Oh .Growth of tin whiskers for lead-free plated leadframe packages in high humid environments and during thermal cycling[J].Microelectronics and reliability,2007(12):1928-1949. |
[18] | Lal S.;Moyer T.D. .Role of intrinsic stresses in the phenomena of tin whiskers in electrical connectors[J].IEEE transactions on electronics packaging manufacturing: A publication of the IEEE Components, Packaging, and Manufacturing Technology Society,2005(1):63-74. |
[19] | Takahiko Kato;Haruo Akahoshi;Takeshi Terasaki;Tomio lwasaki;Masato Nakamura;Tomoaki Hashimoto;Asao Nishimura .Whisker Initiation Behavior from Electrodeposited Sn/Cu Coating on Cu Leadframe[J].Materials Science Forum,2007(3):1685-1688. |
[20] | Whisker growth on tin finishes of different electrolytes[J].Microelectronics and reliability,2008(1):105. |
[21] | David A. Pinsky .The role of dissolved hydrogen and other trace impurities on propensity of tin deposits to grow whiskers[J].Microelectronics and reliability,2008(5):675-681. |
[22] | Shi-Bo Li;Guo-Ping Bei;Hong-Xiang Zhai .The origin of driving force for the formation of Sn whiskers at room temperature[J].Journal of Materials Research,2007(11):3226-3232. |
[23] | Hilty R.D.;Corman N.E.;Herrmann H. .Electrostatic fields and current-flow impact on whisker growth[J].IEEE transactions on electronics packaging manufacturing: A publication of the IEEE Components, Packaging, and Manufacturing Technology Society,2005(1):75-84. |
[24] | Keith Whitlaw;Andre Egli;Mike Toben .Preventing whiskers in electrodeposited tin for semiconductor lead frame applications[J].Circuit world,2004(2):20-24. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%