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以Sm和Sm2S3为靶材,采用双靶子溅射系统,于单晶Si基板上成功制作了S-SmS和M-SmS微晶薄膜,并采用XRD,AFM和RBS及光学性能测定等测试手段对薄膜进行了分析测试.结果表明:基板温度低于200℃的情况下;或者在基板温度为400℃,薄膜组成中Sm过量的条件下均可以直接获得在常温常压下稳定存在的M-SmS微晶薄膜.S-SmS和M-SmS微晶薄膜表现出明显不同的光学特性.

参考文献

[1] Jayaraman A;Narayanamurti V;Bucher E et al.Continuo-us and Discontinuous Semiconductor-metal Tran-sition in Samarium Monochalcogenides under Pressure[J].Physical Review Letters,1970,25(20):1430.
[2] HICKEY C F;Gibson U J .Optical Response of Switch-ing SmS in Thin Films Prepared by Reactive Evaporation[J].Journal of Applied Physics,1987,62(09):3912-3916.
[3] Petrov M P et al.Holographics Storage in SmS Thin Films[J].Optics Communications,1977,22(03):293-296.
[4] Charles B Greenberg .Optically Switchable Thin Film: A Review[J].Thin Solid Films,1994,251:81-93.
[5] HICKEY C F;Gibson U J.SmS Phase Transition in Thin Films Prepared by Reactive Evaporation[J].Phase Transitions,1989(14):187-199.
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