Influence of Isovalent Impurity Ge on Nucleation and Morphology of Supersaturated Oxygen Precipitate in CZSi

稀有金属（英文版）, 2000, 19(3): 217-221.

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1.Institute of Semiconductor Materials,Hebei University of Technology,Tianjin,300130,China

2.Institute of Semiconductor Materials,Hebei University of Technology,Tianjin,300130,China

3.Institute of Semiconductor Materials,Hebei University of Technology,Tianjin,300130,China

4.Institute of Semiconductor Materials,Hebei University of Technology,Tianjin,300130,China

5.Institute of Semiconductor Materials,Hebei University of Technology,Tianjin,300130,China

Influence of Isovalent Impurity Ge on Nucleation and Morphology of Supersaturated Oxygen Precipitate in CZSi

Keywords： CZSi

The effects of Ge in CZSi on the density and the rate of nucleation of supersaturated oxygen precipitation at lower annealing temperatures were examined.It is discovered that rod-like precipitation was suppressed when annealing at 700℃,but Ge has no effect on the morphology and the growth of oxygen precipitation at annealing temperatures more than 900℃.The results indicated that Ge neither acted as center of nucleation nor was involved in oxygen precipitation and its defect.

参考文献

[1]	Morar J F et al.[J].Applied Physics Letters,1987,50:463.
[2]	Wollweber J.;Schroder W.;Schulz D. .SIXGE1-X SINGLE CRYSTALS GROWN BY THE RF-HEATED FLOAT ZONE TECHNIQUE[J].Journal of Crystal Growth,1996(3):243-248.
[3]	Dederichs P H .[J].Journal of Physics,1973,43:471.
[4]	Bourret et al.[J].Journal of Applied Physics,1984,55(04):15.

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Influence of Isovalent Impurity Ge on Nucleation and Morphology of Supersaturated Oxygen Precipitate in CZSi

参考文献