利用激光分子束外延技术(LMBE)在SrTiO3(100)单晶基片上外延生长SrTiO3(STO)、BaTiO3(BTO)、Ba0.6Sr0.4TiO3(BST)铁电薄膜.通过反射高能电子衍射(RHEED)实时监测薄膜生长,并结合原子力显微镜(AFM)分析薄膜的生长模式,根据RHEED衍射强度振荡曲线及衍射图样的变化确定动态和静态控制最低晶化温度,发现STO、BTO、BST三种铁电薄膜可以分别在280、330、340℃的低温下实现外延层状生长.
SrTiO3(STO), BaTiO3(BTO) and Ba0.6Sr0.4TiO3(BST)ferroelectric thin films were grown
epitaxilly on SrTiO3(100) single crystal substrates by the laser molecular beam epitaxy(LMBE) method. The growth of the thin films was in-situ monitored with
reflective high energy electron diffraction(RHEED). By using atomic force microscopy(AFM) and RHEED the growth modes were investigated. With the
observation of the varieties of the RHEED intensity oscillations and the diffraction patterns the dynamic and the static crystallization temperature
was controled and confirmed, the epitaxial growth of STO, BTO and BST thin films in layer-by-layer mode was performed at temperatures of 280, 330 and 340℃,
respectively.
参考文献
| [1] | Bouzehouane K, Woodall P, Marcilhac B, et al. Appl. Phys. Lett., 2002, 80 (1): 109--111. [2] Konofaos N, Evangelou E K, Wang Z C, et al. J. Non-crystalline Solids, 2002, 303: 185--189. [3] Tsai M S, Tseng T Y. J. Phys. D., 1999, 32: 2141--2145. [4] Tian H Y, Luo W G, Pu X H, et al. Solid State Communications, 2001, 117: 315--319. [5] Silvan M M, Cobas L F, Palma R J M, et al. Surface and Coatings Technology, 2002, 151-152: 118--121. [6] Wang Z C, Veronika K, Ulf H, et al. Philosophical Magazine B, 2002, 82 (8): 891--903. [7] Shoji M, So B, Ken N. J. J. Vacuum Society, 2002, 45 (2): 90--96. [8] Kazuo S, Masahiro K, Akira U, et al. Jpn J Appl. Phys., 2002, 41 (3): 269--271. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%