利用动态内耗方法测定了两种不同纯度Ta箔经电解充氢处理后在100—400K温度范围内的内耗值(Q~(-1)),并根据Gorsky原理计算了氢在Ta中的扩散系数。实验结果表明,在T>250K和T<180K的温度区间内氢的扩散系数D服从Arrhenius关系,同时计算了扩散常数D_0和激活能U。最后讨论了氢浓度和其它杂质对氢的扩散系数的影响。
The long-range diffusion (Gorsky effect) of hydrogen in Ta has been studied as a function of temperature by means of the dynamical internal friction in the temperature range from 100—400 K. It is shown that the hydrogen diffusion coefficient, D, in 180 K>T and T>250K obeys the Arrhenius relation. The preexponential factor, D_0, and activation energy, U, have been calculated. The effects of hydrogen concentration and other impurities on the hydrogen diffusion coefficient were also discussed.
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