本文采用电子束蒸发法,室温下在Si(400)的基片上生长含锗(Ge)填埋层的非晶硅薄膜,其结构为a-Si/Ge/Sisubstrate,并在真空中进行后续退火.采用Raman散射(Raman Scattering)、X射线衍射(X-ray Diffraction)、高分辨电子扫描显微镜(HRSEM)、光学显微镜和热重差热分析(DSC)等手段,研究退火后样品晶化特性和晶化机理.结果表明,室温下生长的含有250 nm Ge填埋层的生长态样品在400℃退火5h,薄膜基本全部实现晶化,并表现出明显的Si (111)择优取向.样品分别在400℃、500℃、600℃和700℃退火后薄膜的横向光学波的波峰均在519cm-1附近,半高宽大约为6.1 cm-1,且均在Si(111)方向高度择优生长.退火温度为600℃的样品对应的晶粒尺寸约为20 μm.然而,在相同的薄膜结构(a-Si/Ge/Si substrate)的前提下,当把生长温度提高到300℃时,温度高达到700℃退火时间5h后,薄膜依然是非晶硅状态.差热分析表明,室温生长的样品,在后续退火过程中伴随界面应力的释放,从而诱导非晶硅薄膜重结晶成多晶硅薄膜.
参考文献
[1] | Tiemin Zhao;Min Cao .A vertical submicron polysilicon thin-film transistor using a low temperature process[J].IEEE Electron Device Letters,1994(10):415-417. |
[2] | Ishikawa K.;Oh CH.;Matsumura M.;Ozawa M. .Excimer-laser-induced lateral-growth of silicon thin-films[J].Japanese journal of applied physics,1998(3A):731-736. |
[3] | Becker, C.;Conrad, E.;Dogan, P.;Fenske, F.;Gorka, B.;Haenel, T.;Lee, K. Y.;Rau, B.;Ruske, F.;Weber, T.;Berginski, M.;Huepkes, J.;Gall, S.;Rech, B. .Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(6/7):855-858. |
[4] | Tao, Y.;Varlamov, S.;Kunz, O.;Ouyang, Z.;Wong, J.;Soderstrom, T.;Wolf, M.;Egan, R..Effects of annealing temperature on crystallisation kinetics, film properties and cell performance of silicon thin-film solar cells on glass[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2012:186-192. |
[5] | M. A. T. Izmajlowicz;A. J. Flewitt;W. I. Milne;N. A. Morrison .Directional nickel-induced fielded aided lateral crystallization of amorphous silicon[J].Journal of Applied Physics,2003(12):7535-7541. |
[6] | Cheng-Chang Peng;Chen-Kuei Chung;Jen-Fin Lin .Formation of microcrystalline silicon films using rapid crystal aluminum induced crystallization under low-temperature rapid thermal annealing[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(23):6966-6971. |
[7] | Oliver Nast;Stuart R. Wenham .Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization[J].Journal of Applied Physics,2000(1):124-132. |
[8] | Peng CS.;Chen H.;Li JH.;Li YK.;Guo LW.;Dai DY.;Huang Q. Zhou JM.;Zhang YH.;Sheng TT.;Tung CH.;Zhao ZY. .Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers[J].Applied physics letters,1998(24):3160-3162. |
[9] | Natalia F. Izyumskaya;Vitaly S. Avrutin;Anatoly F. Vyatkin .Control over strain relaxation in Si-based heterostructures[J].Solid-State Electronics,2004(issue 8):1265-1278. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%